Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis

The performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study the channel behavior compared with the conventional Si power MOSFET. Our paper investigates the performance of the proposed selective buried triple gate power MOSFET by using different channel materials (SiGe/GeSn over Si) to compare with the conventional Si MOSFET. Our 2D Silvaco simulation output significantly improves device on-current, ON-resistance, channel electron mobility, transconductance, and enhancement in various parameters governing power MOSFET. The unique design of our proposed triple gate gives very high channel mobility of 880 cm²/V·s, which we believe to be significant in the triple gate power MOSFET domain. The results show that our optimized triple-gate device achieves an ultra-low specific ON-resistance of 0.31 mΩ·cm², improving Balliga's FOM1 by 411.61% and FOM2 by 98.704%. This makes it suitable for high-speed and switching devices, compatible with various high-mobility channel materials, and well-suited for future CMOS applications.