Photoluminescence Properties of Ion-Implanted Er<sup>3+</sup> Defects in 4H-SiCOI for Integrated Quantum Photonics

Atomic-size defects, known as color centers, hosted in solid-state materials, such as silicon carbide and diamond, are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these color centers within photonic integrated circuits may enable precise control over their inherent photophysical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium (Er3+) defects embedded in nanometric thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the photoluminescence excitation (PLE) emission characteristics of the Er3+ defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble Er3+ defects within 4H-SiCOI, providing insights into their potential for future quantum applications.

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Publication Details

Journal
ACS Applied Nano Materials
Published
2025-04-11
DOI
https://doi.org/10.1021/acsanm.5c00085
Citations
1
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
Field-Weighted Citation Impact
0.52

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article

Photoluminescence Properties of Ion-Implanted Er3+ Defects in 4H-SiCOI for Integrated Quantum Photonics

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1 citations
ACS Applied Nano Materials
Silicon Nanostructures and Photoluminescence
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article

Photoluminescence Properties of Ion-Implanted Er3+ Defects in 4H-SiCOI for Integrated Quantum Photonics

Alberto Peruzzo, Faraz Ahmed Inam, Sven Rogge, Alexey Lyasota, Stefania Castelletto, Jeffrey C. McCallum, Shao Qi Lim, Joshua Bader, Brett C. Johnson, Qing Li
article en
1 citations

Abstract

Atomic-size defects, known as color centers, hosted in solid-state materials, such as silicon carbide and diamond, are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these color centers within photonic integrated circuits may enable precise control over their inherent photophysical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium (Er3+) defects embedded in nanometric thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the photoluminescence excitation (PLE) emission characteristics of the Er3+ defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble Er3+ defects within 4H-SiCOI, providing insights into their potential for future quantum applications.

ACS Applied Nano MaterialsVol. 8(16)
The University of Melbourne (AU), Aligarh Muslim University (IN), UNSW Sydney (AU), MIT University (MK), Centre for Quantum Computation and Communication Technology (AU), Quandela (France) (FR), Carnegie Mellon University (US), RMIT University (AU)
Department of Science and Technology, Ministry of Science and Technology, India, Australian Research Council, Division of Electrical, Communications and Cyber Systems, Centre of Excellence for Quantum Computation and Communication Technology, Australian Research Council
Openalex Percentile: Top 40%
Silicon Nanostructures and Photoluminescence
0.52
DOISourceOpenAlex
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