Oxygen network formation for efficient charge transport and durable BiVO4 photoanodes with ultra-thin TiO2 layer in solar water splitting

• Analysis and exploitation of oxygen vacancies in BiVO 4 photoanodes at the atomic scale. • Surface chemical reduction reaction (SCR) enables selective control of V O in BiVO 4 photoanodes. • The SCR-enhanced TiO 2 interface improves charge kinetics and photostability. • Maximizing charge kinetics in SCR-BiVO 4 /TiO 2 to optimize CoPi electrodeposition. Bismuth vanadate (BiVO 4 ) has emerged as a prominent oxide semiconductor in solar water splitting investigations owing to facile synthesis and favorable band-alignment with the water oxidation level. Oxygen and oxygen vacancies (V O ) within the BiVO 4 exhibit multifaceted roles across bulk, surface, and interface. This study presents a method for selectively regulating the surface and bulk V O in BiVO 4 through facile chemical redox reactions. A large amount of V O on the BiVO 4 surface enables the formation of a robust networking interface with oxide-based protection overlayers, whereas V O in bulk region must be effectively suppressed. A significant amount of V O can be specifically formed on the BiVO 4 surface via a controlled surface chemical reduction reaction (SCR) at the atomic level, precisely controlling the presence of O 2- and OH - ions. Here, we quantitatively and qualitatively analyze V O changes and the impact of V O on photoelectrochemical operation. As a result, The SCR process allows for the strategic control of the BiVO 4 surface into a V O -rich surface. The controlled surface enhances the charge kinetic by promoting the conformal coating of a n-TiO 2 protective layer and decreasing the charge loss in the interface junction with ensuring stability. Furthermore, the SCR-BiVO 4 /TiO 2 /CoPi photoanodes exhibit a highly stable photocurrent density of 3.9 mA cm −2 at 1.23 V RHE . Surface modification and understanding of the oxygen-end network can be broadly applied to photoelectrodes that require oxide-based overlays. A novel surface chemical reduction reaction method is proposed to selectively regulate surface and bulk V O in BiVO 4 photoanodes, enhancing charge transfer efficiency for oxygen evolution reaction.

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Publication Details

Journal
Applied Surface Science Advances
Published
2025-04-11
DOI
https://doi.org/10.1016/j.apsadv.2025.100737
Citations
3
Primary Topic
Advanced Photocatalysis Techniques
Type
article
Field-Weighted Citation Impact
1.09

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article

Oxygen network formation for efficient charge transport and durable BiVO4 photoanodes with ultra-thin TiO2 layer in solar water splitting

Dong Su Kim, Kun Woong Lee, Su Yeon Jung, Hyung Koun Cho et al.
3 citations
Applied Surface Science Advances
Advanced Photocatalysis Techniques
1.09
article

Oxygen network formation for efficient charge transport and durable BiVO4 photoanodes with ultra-thin TiO2 layer in solar water splitting

Dong Su Kim, Kun Woong Lee, Su Yeon Jung, Hyung Koun Cho, Joohoon Kang
article en
3 citations

Abstract

• Analysis and exploitation of oxygen vacancies in BiVO 4 photoanodes at the atomic scale. • Surface chemical reduction reaction (SCR) enables selective control of V O in BiVO 4 photoanodes. • The SCR-enhanced TiO 2 interface improves charge kinetics and photostability. • Maximizing charge kinetics in SCR-BiVO 4 /TiO 2 to optimize CoPi electrodeposition. Bismuth vanadate (BiVO 4 ) has emerged as a prominent oxide semiconductor in solar water splitting investigations owing to facile synthesis and favorable band-alignment with the water oxidation level. Oxygen and oxygen vacancies (V O ) within the BiVO 4 exhibit multifaceted roles across bulk, surface, and interface. This study presents a method for selectively regulating the surface and bulk V O in BiVO 4 through facile chemical redox reactions. A large amount of V O on the BiVO 4 surface enables the formation of a robust networking interface with oxide-based protection overlayers, whereas V O in bulk region must be effectively suppressed. A significant amount of V O can be specifically formed on the BiVO 4 surface via a controlled surface chemical reduction reaction (SCR) at the atomic level, precisely controlling the presence of O 2- and OH - ions. Here, we quantitatively and qualitatively analyze V O changes and the impact of V O on photoelectrochemical operation. As a result, The SCR process allows for the strategic control of the BiVO 4 surface into a V O -rich surface. The controlled surface enhances the charge kinetic by promoting the conformal coating of a n-TiO 2 protective layer and decreasing the charge loss in the interface junction with ensuring stability. Furthermore, the SCR-BiVO 4 /TiO 2 /CoPi photoanodes exhibit a highly stable photocurrent density of 3.9 mA cm −2 at 1.23 V RHE . Surface modification and understanding of the oxygen-end network can be broadly applied to photoelectrodes that require oxide-based overlays. A novel surface chemical reduction reaction method is proposed to selectively regulate surface and bulk V O in BiVO 4 photoanodes, enhancing charge transfer efficiency for oxygen evolution reaction.

Applied Surface Science AdvancesVol. 27
Lawrence Berkeley National Laboratory (US), Sungkyunkwan University (KR)
Ministry of Education, National Research Foundation of Korea
Openalex Percentile: Top 24%
Advanced Photocatalysis Techniques
1.09
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