Improvement of TiO2 memristor properties by <b>α</b>-particles irradiation

This paper investigates the effect of alpha-particle irradiation on the memristive properties of titanium oxide-based structures. Multilayer TiOx/Ti structures were fabricated by magnetron sputtering and subjected to alpha-particle irradiation with a fluence of 2 × 1012 ions/cm2. Defect formation was modeled using the Monte Carlo method. The memristive characteristics of the structures were studied before and after bombardment. Ion bombardment was found to increase the number of stable resistive states by nearly three times, extend the number of switching cycles by 1.5 times, and significantly enhance the ROFF/RON ratio. This optimization of memristive parameters is attributed to the formation of locally created defects.

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Publication Details

Journal
Applied Physics Letters
Published
2025-04-01
DOI
https://doi.org/10.1063/5.0244853
Citations
4
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
2.92
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article

Improvement of TiO2 memristor properties by α-particles irradiation

Е. В. Кукуева, Yu. V. Balakshin, M. N. Martyshov, П. А. Форш et al.
4 citations
Applied Physics Letters
Advanced Memory and Neural Computing
2.92
article

Improvement of TiO2 memristor properties by α-particles irradiation

Е. В. Кукуева, Yu. V. Balakshin, M. N. Martyshov, П. А. Форш, A. V. Emelyanov, A. S. Ilin, И. И. Задириев, Boris S. Shvetsov, П. К. Кашкаров, D. M. Rusakov, A. A. Shemukhin, D. V. Gusev
article en
4 citations

Abstract

This paper investigates the effect of alpha-particle irradiation on the memristive properties of titanium oxide-based structures. Multilayer TiOx/Ti structures were fabricated by magnetron sputtering and subjected to alpha-particle irradiation with a fluence of 2 × 1012 ions/cm2. Defect formation was modeled using the Monte Carlo method. The memristive characteristics of the structures were studied before and after bombardment. Ion bombardment was found to increase the number of stable resistive states by nearly three times, extend the number of switching cycles by 1.5 times, and significantly enhance the ROFF/RON ratio. This optimization of memristive parameters is attributed to the formation of locally created defects.

Applied Physics LettersVol. 126(14)
Lomonosov Moscow State University (RU), Kurchatov Institute (RU), Moscow State University (TJ)
Openalex Percentile: Top 9%
Advanced Memory and Neural Computing
2.92
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Improvement of TiO2 memristor properties by <b>α</b>-particles irradiation — Е. В. Кукуева, Yu. V. Balakshin, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS