A Comprehensive Study on CdGeP2‐Based Photonic Device for Dual Applications in Solar Cell and Photodetector

A promising cadmium germanium phosphide (CdGeP 2 )‐based photonic device has been designed and investigated in detail for dual applications in photovoltaic and photosensing. Proposed n‐ZnSe/p‐CdGeP 2 /p + ‐GeS heterostructure device is constructed with a ZnSe window layer and GeS back‐surface‐filed (BSF) layer. During the investigation, optimal thickness, doping concentration, and defect density have been discerned for different layers as well as interfaces. Essential performance parameters for solar cell (SC) and photodetector (PD) devices such as open circuit voltage (V OC ), short‐circuit current density (J SC ), fill factor (FF), power conversion efficiency (PCE), responsivity (R), and detectivity (D ∗ ) have exhibited remarkable characteristics. With GeS BSF layer, these parameters attained the values of 1.24 V, 29.58 mA/cm 2 , 87.13%, 31.82%, 0.58 A/W, and 3.87 × 10 18 Jones, accordingly. As maximum values of R and D ∗ have been achieved at a photon wavelength of 770 nm and demonstrated intensified values of R and D ∗ across 700 nm–770 nm, it incorporates the credibility of the proposed device to be used in numerous near‐infrared (NIR) applications. Results of this work are expected to provide indispensable perceptions for implementing a highly efficient photonic device based on an aspiring CdGeP 2 absorber material.