Rational molecular doping to enhance interfacial carrier dynamics for reliable hole transport layer-free perovskite solar cells

The electron affinity of TCNQ and F4TCNQ is pivotal in enhancing the interfacial charge collection and optimizing the energy-level alignment of hole transport layer (HTL)-free inverted perovskite solar cells.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d4tc05234j
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Rational molecular doping to enhance interfacial carrier dynamics for reliable hole transport layer-free perovskite solar cells

Qingming Huang, Y. Li, Jidong Deng, Ye Yang et al.
Journal of Materials Chemistry C
Perovskite Materials and Applications
article

Rational molecular doping to enhance interfacial carrier dynamics for reliable hole transport layer-free perovskite solar cells

Qingming Huang, Y. Li, Jidong Deng, Ye Yang, Yinhu Gao, Xiaofeng Li, Xiaoli Zhang, Xiao Wang, Kun Wei, Yang Li, Jinbao Zhang, Yuliang Che
article en

Abstract

The electron affinity of TCNQ and F4TCNQ is pivotal in enhancing the interfacial charge collection and optimizing the energy-level alignment of hole transport layer (HTL)-free inverted perovskite solar cells.

Journal of Materials Chemistry CVol. 13(20)
Jiujiang University (CN), Guangdong University of Technology (CN), Xiamen University (CN)
Openalex Percentile: Top 94%
Perovskite Materials and Applications
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