Deep ultraviolet optoelectronic memristors based on gallium oxide for biomimetic visual processing and neuromorphic memory applications

Deep ultraviolet (DUV) has a wide range of applications in areas such as the monitoring and communication fields. However, the separation of sensor units and memory units in conventional DUV photodetectors will increase costs and reduce processing speed. In this paper, we report the development of DUV photoelectric memristors fabricated using gallium oxide (Ga2O3) to emulate the photoelectric synaptic functions of bionic visual system. The devices showcase nonvolatile resistance switching behavior, effectively mimicking neuromorphic processes such as short-term plasticity and long-term plasticity in both singular and repeated cycles under optical pulse modulation. Moreover, the fabrication of a 5 × 5 array configuration allowed us to simulate the learning, memory formation, and forgetting process, along with the ability to store and erase the image information. This work not only broadens the application scope of Ga2O3 as an ultra-wide bandgap semiconductor but also offers insight into the development of integrated sensing-storage devices for artificial intelligence systems, paving the way for future advancements in neuromorphic engineering and bio-inspired computing systems.