A facile one-pot recipe for topological insulator Bi<sub>2</sub>Se<sub>3</sub> with thermoelectric properties

Topological materials from heavy p-block metal chalcogenides with layered structures and anisotropic bonding are of immense importance for thermoelectrics. The synthesis of such materials with simple chemical routes is of high significance. Here, we present a low-temperature, facile, one-pot, and cost-effective synthesis of topological insulator Bi<sub>2</sub>Se<sub>3</sub> nanosheets. The material demonstrates excellent electrical transport and low thermal conductivity, leading to a peak thermoelectric figure of merit (<i>ZT</i>) of ∼0.41 at 480 K. Additionally, the synthesis of Bi<sub>2</sub>S<sub>3</sub> nanoparticles under ambient conditions suggests the versatility of the method.

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Publication Details

Journal
Chemical Communications
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cc01314c
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
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article

A facile one-pot recipe for topological insulator Bi2Se3 with thermoelectric properties

Anil Kumar Belagal Motatis, Ravindra Dhar, Satya N. Guin, Shuva Biswas
Chemical Communications
Advanced Thermoelectric Materials and Devices
article

A facile one-pot recipe for topological insulator Bi2Se3 with thermoelectric properties

Anil Kumar Belagal Motatis, Ravindra Dhar, Satya N. Guin, Shuva Biswas
article en

Abstract

Topological materials from heavy p-block metal chalcogenides with layered structures and anisotropic bonding are of immense importance for thermoelectrics. The synthesis of such materials with simple chemical routes is of high significance. Here, we present a low-temperature, facile, one-pot, and cost-effective synthesis of topological insulator Bi<sub>2</sub>Se<sub>3</sub> nanosheets. The material demonstrates excellent electrical transport and low thermal conductivity, leading to a peak thermoelectric figure of merit (<i>ZT</i>) of ∼0.41 at 480 K. Additionally, the synthesis of Bi<sub>2</sub>S<sub>3</sub> nanoparticles under ambient conditions suggests the versatility of the method.

Chemical CommunicationsVol. 61(40)
Jawaharlal Nehru Centre for Advanced Scientific Research (IN), Birla Institute of Technology and Science - Hyderabad Campus (IN), Birla Institute of Technology and Science, Pilani (IN)
Openalex Percentile: Top 95%
Advanced Thermoelectric Materials and Devices
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