A self-powered photodetector of SnSeS/p-Si heterojunction with high-performance
The fastest relaxation time of the LPV of SnSeS/p-Si is about 0.48 μs, the cutoff frequencies (3 dB) can exceed 20 kHz.
Authors
- Bo Song (ORCID: https://orcid.org/0000-0003-2000-5071)
- Qiang Fu (ORCID: https://orcid.org/0000-0003-1066-2131)
- Min Kyun Kang (ORCID: https://orcid.org/0000-0002-3843-1645)
- Yu Sui (ORCID: https://orcid.org/0000-0001-8240-2326)
- Xiangyu Fan
- Wanling Deng (ORCID: https://orcid.org/0000-0002-4018-5578)
- Yujuan Pei (ORCID: https://orcid.org/0000-0002-4112-9463)
- Jun Hu (ORCID: https://orcid.org/0000-0002-7575-2165)
- Mengting Liu (ORCID: https://orcid.org/0009-0003-5458-9527)
- Xianjie Wang (ORCID: https://orcid.org/0000-0003-1688-2768)
Institutions
- Harbin Institute of Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc00243e
- Citations
- 7
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 3.62
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China
- Fundamental Research Funds for the Central Universities
- National Science Fund for Distinguished Young Scholars