Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling
Abstract We report the successful integration of low-temperature polycrystalline all-around diamond as heat spreaders with 150 nm gate length N-polar GaN MISHEMT platform to improve power efficiencies for X-band applications. With an all-around integration scheme, the CVD-grown diamond reduces channel’s peak temperature, improving device performance and reliability. A combination of optimized low-temperature diamond growth at 500 °C with the thermally stable molybdenum gate metal and MOCVD-grown SiN x gate-dielectric was utilized for the successful integration. The fabricated device exhibited a I DSS of 0.96 A mm −1 and an ON-to-OFF ratio of 10 5 . This marks the first post-process diamond integration on a RF GaN HEMT device.
Authors
- Nirupam Hatui (ORCID: https://orcid.org/0000-0002-8848-3312)
- Mohamadali Malakoutian (ORCID: https://orcid.org/0000-0002-5760-0408)
- Umesh K. Mishra (ORCID: https://orcid.org/0000-0001-8084-9247)
- Emre Akso (ORCID: https://orcid.org/0000-0001-9650-6871)
- Srabanti Chowdhury (ORCID: https://orcid.org/0000-0001-8367-0461)
- Christian Wurm (ORCID: https://orcid.org/0000-0002-7011-2839)
- Rohith Soman (ORCID: https://orcid.org/0000-0003-4714-5875)
- Jeong-kyu Kim
Institutions
- University of California, Santa Barbara (US)
- Stanford University (US)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-04-01
- DOI
- https://doi.org/10.35848/1882-0786/adcb87
- Citations
- 11
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 13.84
Funders
- National Science Foundation
- Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
- Defense Advanced Research Projects Agency
- Division of Electrical, Communications and Cyber Systems