Neutron activation and mass-spectrometric determination of the trace impurity composition of high-purity silicon
Abstract This paper discusses the use of inductively coupled plasma mass spectrometry (ICP-MS) and instrumental neutron activation analysis (INAA) to determine the trace impurity composition of high-purity silicon. The technique allows one to determine about 65 impurity elements with detection limits of n×10 -8 - n×10 -13 wt.%. The technique can be used to determine the trace impurity composition of ultra-pure silicon.
Authors
- В. К. Карандашев (ORCID: https://orcid.org/0000-0003-0684-272X)
- I. I. Sadikov (ORCID: https://orcid.org/0000-0002-9779-370X)
- B. Kh. Yarmatov
- T. Usmanov (ORCID: https://orcid.org/0000-0002-2841-3101)
- Ya. A. Akhmedov
Institutions
- Academy of Sciences Republic of Uzbekistan (UZ)
- Institute of Nuclear Physics (UZ)
- Institute of Microelectronics Technology and High Purity Materials (RU)
Publication Details
- Journal
- Journal of Physics Conference Series
- Published
- 2025-04-01
- DOI
- https://doi.org/10.1088/1742-6596/2984/1/012034
- Primary Topic
- Ion-surface interactions and analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00