Development of Low‐Temperature Conditions for In‐situ Doping, Deposition of Yttria‐Stabilized Zirconia High‐k Gate Dielectric and Creation of Ti Ohmic Contacts on Polycrystalline GeSn/SiO₂/Si (100) Films

The conditions for low‐temperature (300 °C) in‐situ doping of polycrystalline GeSn films grown by hot‐wire chemical vapor deposition with Ga impurity from a sublimating Ge:Ga source have been developed for the first time. To create a subcontact p+ region, a doping method with Ga evaporation from a melt zone formed on such a source has been used. On polycrystalline GeSn films at temperatures below 30 °C, ohmic Ti contacts and, for the first time, a high‐k yttria‐stabilized zirconia gate dielectric with good electrical characteristics are received by electron‐beam deposition method. The obtained results are of interest for the creation of thin‐film transistors for active‐matrix liquid crystal displays.