Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films

Abstract Chalcogenide materials are promising candidates for next generation memories since they can be stacked to integrate both two‐terminal non‐volatile memory and volatile selector devices for large‐scale‐integration crossbar arrays. Traditionally, devices based on chalcogenides have been fabricated using vacuum‐dependent and high‐temperature methods. In this study, the first demonstration of ovonic threshold switching (OTS) and resistive switching (RS) behaviors in zinc telluride (ZnTe) thin films produced via a rapid, cost‐effective, and vacuum‐free electrodeposition technique is presented. This method also allows for control over ZnTe film composition within the same electrolyte by varying the deposition potentials. These findings reveal that stoichiometric ZnTe thin films exhibit OTS behavior, while Te‐rich ZnTe films display RS characteristics. The OTS selectors show robust threshold switching with controllable operating current levels, whereas the RS memory devices demonstrate reliable switching at low voltages, achieving multilevel switching through variations in DC sweeping voltages. A one‐selector‐one‐resistor (1S1R) architecture is successfully implemented by connecting the stoichiometric ZnTe selector in series with the Te‐rich ZnTe memory element, thereby validating the potential of OTS as a selector for crossbar applications. This work provides a significant advancement toward constructing stacked structures of memory and selector devices through electrodeposition methods, paving the way for high‐density crossbar array applications.