Transport characteristics of graphene transistor with dual-gate primarily located in Non-channel region

Abstract Currently, most field effect transistors are configured with the gates locating directly above or below the channel region. Here, we have designed and prepared a novel dual-gate graphene transistor, in which the dual-gate mainly located below the source and drain electrodes and partially overlapped with the channel region. The experimental results show that although the two gates are mainly located in Non-channel region, the transport characteristics of the graphene transistor can be precisely tuned by the dual-gate structure. The Dirac point can be regulated approximately linearly by the gate voltage with the mobility values above 6000 cm 2 / (V·s) at room temperature. This provides new possibility for the design of future graphene field effect transistors.