Low-temperature electron–electron interaction correction to the anomalous Hall effect in Fe₃GaTe₂ single crystals

The electron-electron interaction (EEI), weak localization and Kondo effect are known to correct low-temperature (low-<i>T</i>) resistivity in metals and semimetals. However, the impact of EEI on the anomalous Hall effect (AHE) by EEI remains a subject of debate. In this study, we investigate the EEI corrections to both the low-<i>T</i>longitudinal and AH resistivities in van der Waals ferromagnetic Fe₃GaTe₂single crystals with a high Curie temperature. Our findings reveal that the longitudinal resistivity is well-described by the EEI theory developed by Altshuler<i>et al,</i>while the AH resistivity deviates from this theory. We found that the AH resistivity follows aTtemperature dependence, and its relative rate of change is 2.6 times that of the longitudinal resistivity. These results demonstrate that EEI significantly influences the low-<i>T</i>AH resistivity under intrinsic mechanism in Fe₃GaTe₂. This observation challenges the conventional understanding that EEI does not contribute to the AHE in systems with mirror symmetry, as suggested by skew scattering and side jump models. This work opens avenues for further exploration of EEI effect in disordered magnetic materials.