Improved blocking capability of N-ion-implanted <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> U-shaped trench gate MOSFET by annealing in oxygen
Abstract To improve the blocking capability of U-shaped trench gate MOSFETs (UMOSFETs) based on nitrogen-implanted current blocking layer (CBL), the post-implantation annealing atmosphere is optimized. Compared to the UMOSFET annealed in nitrogen, the oxygen-annealed device shows an improved breakdown voltage, increasing from 830 V to 1330 V, while maintaining similar specific on-resistance. By analyzing the leakage mechanisms of CBLs, the lower leakage current in the oxygen-annealed device is attributed to the reduced concentration of certain deep donors and the change in trap energy level involved in the Poole–Frenkel (PF) emission. This work validates oxygen annealing as an effective approach to optimizing nitrogen-implanted β -Ga 2 O 3 power MOSFETs.
Authors
- Shibing Long (ORCID: https://orcid.org/0000-0001-6220-4461)
- Guangwei Xu
- Man Hoi Wong (ORCID: https://orcid.org/0000-0002-0908-4509)
- Xuanze Zhou (ORCID: https://orcid.org/0000-0001-9905-150X)
- Xiaodong Zhang (ORCID: https://orcid.org/0000-0002-7528-9828)
- Qi Liu (ORCID: https://orcid.org/0000-0001-7062-831X)
- Jingbo Zhou (ORCID: https://orcid.org/0000-0002-1375-9644)
- Jinyang Liu (ORCID: https://orcid.org/0000-0001-8883-4656)
- Huidong Yao
Institutions
- University of Science and Technology of China (CN)
- Hong Kong University of Science and Technology (HK)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-04-01
- DOI
- https://doi.org/10.35848/1882-0786/adcafe
- Citations
- 4
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 1.71
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- National Key Research and Development Program of China