Computational design of dopant-free hole transporting materials: achieving an optimal balance between water stability and charge transport

Hole transporting materials (HTMs) play a crucial role in the performance and stability of perovskite solar cells (PSCs). The interaction of HTMs with water significantly affects the overall stability and efficiency of these devices. Hydrophilic HTMs or those lacking adequate water resistance can absorb moisture, leading to degradation of both the HTM and the perovskite layer. In this study, we employed a proof-of-principle approach to investigate the effect of various chemical modifications on a promising HTM candidate, 8,11-bis(4-(<i>N</i>,<i>N</i>-bis(4-methoxyphenyl)amino)-1-phenyl)-dithieno[1,2-<i>b</i>:4,3-<i>b</i>]phenazine (TQ4). Using molecular dynamics simulations, we examined the collective behavior of chemically modified TQ4 molecules in the presence of water at different concentrations. To ensure that enhanced water resistance did not compromise the desirable electronic properties of the HTM, we analyzed both the individual and collective electronic structures of the HTM molecule and its molecular crystal. Additionally, we calculated the charge transport rate in different directions within the HTM crystal using Marcus theory. Our findings indicate that chemical modifications at the periphery of TQ4, particularly the symmetric addition of two F-chains, result in the optimal combination of electronic, crystal structure, and water-resistant properties. HOMO shape analysis reveals that the HOMO does not extend onto the added F-chains, reducing the maximum predicted hole mobility relative to TQ4 by an order of magnitude. Despite this, a hole mobility of 2.8 × 10<sup>-4</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> is successfully achieved for all designed HTMs, reflecting a compromise between stability and charge transport. This atomistic insight into the collective behavior of chemically modified HTMs and its effect on hole transport pathways paves the way for designing more effective HTMs for PSC applications.

Authors

Institutions

Publication Details

Journal
Physical Chemistry Chemical Physics
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cp00082c
Citations
3
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
2.19
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Computational design of dopant-free hole transporting materials: achieving an optimal balance between water stability and charge transport

Farzaneh Shayeganfar, Ayoub Mohammadian, Negar Ashari Astani
3 citations
Physical Chemistry Chemical Physics
Semiconductor materials and devices
2.19
article

Computational design of dopant-free hole transporting materials: achieving an optimal balance between water stability and charge transport

Farzaneh Shayeganfar, Ayoub Mohammadian, Negar Ashari Astani
article en
3 citations

Abstract

Hole transporting materials (HTMs) play a crucial role in the performance and stability of perovskite solar cells (PSCs). The interaction of HTMs with water significantly affects the overall stability and efficiency of these devices. Hydrophilic HTMs or those lacking adequate water resistance can absorb moisture, leading to degradation of both the HTM and the perovskite layer. In this study, we employed a proof-of-principle approach to investigate the effect of various chemical modifications on a promising HTM candidate, 8,11-bis(4-(<i>N</i>,<i>N</i>-bis(4-methoxyphenyl)amino)-1-phenyl)-dithieno[1,2-<i>b</i>:4,3-<i>b</i>]phenazine (TQ4). Using molecular dynamics simulations, we examined the collective behavior of chemically modified TQ4 molecules in the presence of water at different concentrations. To ensure that enhanced water resistance did not compromise the desirable electronic properties of the HTM, we analyzed both the individual and collective electronic structures of the HTM molecule and its molecular crystal. Additionally, we calculated the charge transport rate in different directions within the HTM crystal using Marcus theory. Our findings indicate that chemical modifications at the periphery of TQ4, particularly the symmetric addition of two F-chains, result in the optimal combination of electronic, crystal structure, and water-resistant properties. HOMO shape analysis reveals that the HOMO does not extend onto the added F-chains, reducing the maximum predicted hole mobility relative to TQ4 by an order of magnitude. Despite this, a hole mobility of 2.8 × 10<sup>-4</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> is successfully achieved for all designed HTMs, reflecting a compromise between stability and charge transport. This atomistic insight into the collective behavior of chemically modified HTMs and its effect on hole transport pathways paves the way for designing more effective HTMs for PSC applications.

Physical Chemistry Chemical PhysicsVol. 27(18)
Amirkabir University of Technology (IR), Universal Scientific Education and Research Network (IR)
Openalex Percentile: Top 13%
Semiconductor materials and devices
2.19
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.