Toward flexible and omnidirectional self-powered near-ultraviolet photodetection by constructing a mixed-dimensional nanobelt/nanosheet heterojunction of CdS/PbI<sub>2</sub>

Owing to the growing demand for scaling down and low-power consumption in the Internet of Things and wearable devices, there is an increasing need for miniaturized, self-powered flexible optoelectronics with omnidirectional photodetection ability. In this work, a mixed-dimensional heterojunction near-ultraviolet photodetector of CdS nanobelts/PbI<sub>2</sub> nanosheets was prepared <i>via</i> chemical vapor deposition and liquid-phase growth methods. Importantly, the as-fabricated self-powered near-ultraviolet photodetector displayed a low <i>I</i><sub>dark</sub> of 7 × 10<sup>-14</sup> A, high <i>I</i><sub>light</sub>/<i>I</i><sub>dark</sub> ratio of 2.06 × 10<sup>3</sup>, fast rise/decay times of 581 μs/581 μs and exceptional responsivity and detectivity of 3446.04 mA W<sup>-1</sup> and 9.05 × 10<sup>9</sup> Jones, respectively, benefiting from the built-in field. In addition, the flexible near-ultraviolet photodetector exhibited impressive omnidirectional photodetection and robust bending endurance. Thus, all these results reveal the technological potential of the mixed-dimensional photodetector for next-generation high-performance near-ultraviolet optoelectronics.

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Publication Details

Journal
Nanoscale
Published
2025-01-01
DOI
https://doi.org/10.1039/d5nr00712g
Citations
5
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
3.65
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article

Toward flexible and omnidirectional self-powered near-ultraviolet photodetection by constructing a mixed-dimensional nanobelt/nanosheet heterojunction of CdS/PbI2

Shuai Gao, Xiaoyan Du, Guangcan Wang, Junchen Wan et al.
5 citations
Nanoscale
Advanced Semiconductor Detectors and Materials
3.65
article

Toward flexible and omnidirectional self-powered near-ultraviolet photodetection by constructing a mixed-dimensional nanobelt/nanosheet heterojunction of CdS/PbI2

Shuai Gao, Xiaoyan Du, Guangcan Wang, Junchen Wan, Yujie Xu, Zaixing Yang, Zixu Sa, Yanxue Yin, Mingsheng Xu
article en
5 citations

Abstract

Owing to the growing demand for scaling down and low-power consumption in the Internet of Things and wearable devices, there is an increasing need for miniaturized, self-powered flexible optoelectronics with omnidirectional photodetection ability. In this work, a mixed-dimensional heterojunction near-ultraviolet photodetector of CdS nanobelts/PbI<sub>2</sub> nanosheets was prepared <i>via</i> chemical vapor deposition and liquid-phase growth methods. Importantly, the as-fabricated self-powered near-ultraviolet photodetector displayed a low <i>I</i><sub>dark</sub> of 7 × 10<sup>-14</sup> A, high <i>I</i><sub>light</sub>/<i>I</i><sub>dark</sub> ratio of 2.06 × 10<sup>3</sup>, fast rise/decay times of 581 μs/581 μs and exceptional responsivity and detectivity of 3446.04 mA W<sup>-1</sup> and 9.05 × 10<sup>9</sup> Jones, respectively, benefiting from the built-in field. In addition, the flexible near-ultraviolet photodetector exhibited impressive omnidirectional photodetection and robust bending endurance. Thus, all these results reveal the technological potential of the mixed-dimensional photodetector for next-generation high-performance near-ultraviolet optoelectronics.

NanoscaleVol. 17(18)
Shandong University (CN), University of Jinan (CN), Hebei Semiconductor Research Institute (CN), State Key Laboratory of Crystal Materials
Openalex Percentile: Top 7%
Advanced Semiconductor Detectors and Materials
3.65
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