Structural, Optical and luminescence properties of Zn_(1-x)S:xRE³⁺ (RE = Ce/Eu/Dy/Sm) thin films

Abstract Rare earth elements Ce, Eu, Dy and Sm doped ZnS thin films have been successfully prepared using spin coating method. The X-ray diffraction pattern showed the hexagonal wurtzite structure of the prepared film. The PL emission spectra showed the bands related to the crystalline defect states such as zinc or sulfur vacancies, zinc or sulfur interstitials. The Ce-doped ZnS thin films with efficient blue emission properties are excellent candidates for optoelectronics device applications. The Eu doped ZnS thin films showed a highly efficient red light generation with remarkable performance. The Sm doped ZnS thin films have orange emission due to its f-f transitions in the 4f configuration. The CIE coordinates of Ce, Eu, Dy and Sm doped ZnS film are (0.124, 0.169), (0.656, 0.315), (0.339, 0.333) and (0.569, 0.429) respectively. The life time with single exponential curve of Ce, Eu, Dy and Sm doped ZnS film are 0.1378, 1.0511, 1.0821, 1.1005 ms respectively. The results confirmed that the prepared films are excellent candidate for opto-electronic applications.