An On-Chip Balun Using Planar Spiral Inductors Based on Glass Wafer-Level IPD Technology

As integrated electronic microsystems advance, their internal components demonstrate increasing miniaturization, higher-density integration, and, consequently, significantly enhanced performance. This paper presents an on-chip transformer balun. The balun has a combination of planar coupled inductors and filtering capacitors using integrated passive device (IPD) technology, giving it the advantages of a more compact circuit size and lower cost to achieve single-ended to differential function on glass substrates. Moreover, it can be integrated in systems by flip-chip. The die has a size of 1.81 mm × 1.36 mm with a -15 dB single-ended return loss bandwidth of 2.07 GHz to 4.30 GHz. Within this bandwidth, the maximum insertion loss is 2.56 dB, and the amplitude imbalance is less than 2.04 dB. The phase difference between the differential signals is 180 ± 14.02° and the common mode rejection ratio (CMRR) is above 19.08 dB. The balun has the potential of miniaturization for integration on package or through-glass interposers (TGIs).

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Publication Details

Journal
Micromachines
Published
2025-04-09
DOI
https://doi.org/10.3390/mi16040443
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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An On-Chip Balun Using Planar Spiral Inductors Based on Glass Wafer-Level IPD Technology

Peng Wu, Yong Wang, Jingchao Xia, Wei Wang et al.
Micromachines
Radio Frequency Integrated Circuit Design
article

An On-Chip Balun Using Planar Spiral Inductors Based on Glass Wafer-Level IPD Technology

Peng Wu, Yong Wang, Jingchao Xia, Wei Wang, Qian Jiang, Shanshan Sun, Haiyang Quan
article en

Abstract

As integrated electronic microsystems advance, their internal components demonstrate increasing miniaturization, higher-density integration, and, consequently, significantly enhanced performance. This paper presents an on-chip transformer balun. The balun has a combination of planar coupled inductors and filtering capacitors using integrated passive device (IPD) technology, giving it the advantages of a more compact circuit size and lower cost to achieve single-ended to differential function on glass substrates. Moreover, it can be integrated in systems by flip-chip. The die has a size of 1.81 mm × 1.36 mm with a -15 dB single-ended return loss bandwidth of 2.07 GHz to 4.30 GHz. Within this bandwidth, the maximum insertion loss is 2.56 dB, and the amplitude imbalance is less than 2.04 dB. The phase difference between the differential signals is 180 ± 14.02° and the common mode rejection ratio (CMRR) is above 19.08 dB. The balun has the potential of miniaturization for integration on package or through-glass interposers (TGIs).

MicromachinesVol. 16(4)
Peking University (CN), Beijing Microelectronics Technology Institute (CN)
Affordable and clean energy
Openalex Percentile: Top 94%
Radio Frequency Integrated Circuit Design
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