Investigation of SnO2/B4C multilayer for application near the boron K-absorption edge

The interfaces and optical properties of a new SnO2/B4C multilayer pair were investigated. The evolution of SnO2/B4C interfaces was studied by varying the period thickness from 8.50 to 4.10 nm and individual layers’ thicknesses from 6.0 to 1.5 nm. When the SnO2 layer thickness exceeds 2.0 nm, it remains continuous, achieving an electron density close to bulk values (1.83 e− Å−3), and forms smooth interfaces with B4C. However, when the SnO2 thickness is reduced below 2.0 nm, the layer becomes porous, with an electron density of less than 28% of the bulk value, leading to rougher interfaces with B4C. The optical constants for SnO2 derived from reflectivity measurements performed in the vicinity of the boron K-absorption edge are in close agreement with the calculated values.

Authors

Institutions

Publication Details

Journal
Journal of Applied Physics
Published
2025-04-09
DOI
https://doi.org/10.1063/5.0256977
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Investigation of SnO2/B4C multilayer for application near the boron K-absorption edge

Raj Kumar Gupta, Himanshu Srivastava, S. K., P. N. Rao
Journal of Applied Physics
Silicon and Solar Cell Technologies
article

Investigation of SnO2/B4C multilayer for application near the boron K-absorption edge

Raj Kumar Gupta, Himanshu Srivastava, S. K., P. N. Rao
article en

Abstract

The interfaces and optical properties of a new SnO2/B4C multilayer pair were investigated. The evolution of SnO2/B4C interfaces was studied by varying the period thickness from 8.50 to 4.10 nm and individual layers’ thicknesses from 6.0 to 1.5 nm. When the SnO2 layer thickness exceeds 2.0 nm, it remains continuous, achieving an electron density close to bulk values (1.83 e− Å−3), and forms smooth interfaces with B4C. However, when the SnO2 thickness is reduced below 2.0 nm, the layer becomes porous, with an electron density of less than 28% of the bulk value, leading to rougher interfaces with B4C. The optical constants for SnO2 derived from reflectivity measurements performed in the vicinity of the boron K-absorption edge are in close agreement with the calculated values.

Journal of Applied PhysicsVol. 137(14)
Raja Ramanna Centre for Advanced Technology (IN), Homi Bhabha National Institute (IN)
Openalex Percentile: Top 94%
Silicon and Solar Cell Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.