Effect of ⁶⁰Co γ‐Ray Irradiation on the Linearity of Conductance Updating of the HfO_<i>x</i>:Mg(9%)‐Based Memristive Synapses Studied by Electrochemical Impedance Spectroscopy

Binary metal oxide memristive synapses, with their simple structure, high integration density, low power, and high speed, are promising for aerospace computing chips. However, irradiation can degrade their performance. This article investigates the effect of 60 Co γ‐ray radiation on the memristive synaptic properties of HfO x :Mg(9%), with a particular focus on the changes in the linearity of conductance updating. This is achieved by introducing electrochemical impedance spectroscopy (EIS) to analyze the variations in oxygen‐deficient conductive filaments. Results show that increasing irradiation dose (0–1 Mrad(Si)) decreases high‐resistance state current during long‐term depression, reducing linearity. X‐ray photoelectron spectroscopy reveals increased oxygen vacancies postirradiation, while EIS indicates these vacancies hinder conductive filament rupture, causing linearity damage. This research enhances understanding of irradiation effects and supports the development of radiation‐resistant memristive synapses.