Transfer of diamond thin films using Smart Cut™ technology

The Smart Cut™ process, originally developed for manufacturing SOI wafers, combines ion implantation and direct bonding techniques to transfer thin monocrystalline films. In this study, the transfer technology is adapted to diamond, leveraging the graphitization induced by high-temperature implantation. A diamond film was successfully transferred onto a silicon substrate using a metallic bonding. The crystallinity and composition of the transferred film were analyzed using Transmission Electronic Microscopy (TEM), Electron Energy Loss Spectroscopy (EELS), Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). This transfer approach might offer a fast, low-power consumption and efficient method to obtain high quality thin diamond film which can be used as growth template for diamond-based devices. • Diamond film was transferred on Si substrate by Smart Cut™. • A buried graphite like layer has been formed by hot ion implantation. • Removal of the graphite like layer by plasma etching • High crystallinity of the transferred film was confirmed by EELS and HR-STEM.

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Publication Details

Journal
Diamond and Related Materials
Published
2025-04-09
DOI
https://doi.org/10.1016/j.diamond.2025.112295
Citations
3
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
1.55

Funders

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article

Transfer of diamond thin films using Smart Cut™ technology

J. Widiez, Jérémie Chrétien, Christophe Lecouvey, Isabelle Huyet et al.
3 citations
Diamond and Related Materials
Diamond and Carbon-based Materials Research
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article

Transfer of diamond thin films using Smart Cut™ technology

J. Widiez, Jérémie Chrétien, Christophe Lecouvey, Isabelle Huyet, Nicolas Bernier, Lucas Colonel, D. Mariolle, G. Lapertot, F. Milesi, Lucie Le Van‐Jodin, Philippe Gilles, Pablo Acosta-Alba, Nicolas Gauthier, F. Mazen, François Berger
article en
3 citations

Abstract

The Smart Cut™ process, originally developed for manufacturing SOI wafers, combines ion implantation and direct bonding techniques to transfer thin monocrystalline films. In this study, the transfer technology is adapted to diamond, leveraging the graphitization induced by high-temperature implantation. A diamond film was successfully transferred onto a silicon substrate using a metallic bonding. The crystallinity and composition of the transferred film were analyzed using Transmission Electronic Microscopy (TEM), Electron Energy Loss Spectroscopy (EELS), Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). This transfer approach might offer a fast, low-power consumption and efficient method to obtain high quality thin diamond film which can be used as growth template for diamond-based devices. • Diamond film was transferred on Si substrate by Smart Cut™. • A buried graphite like layer has been formed by hot ion implantation. • Removal of the graphite like layer by plasma etching • High crystallinity of the transferred film was confirmed by EELS and HR-STEM.

Diamond and Related MaterialsVol. 155
Institut polytechnique de Grenoble (FR), Soitec (France) (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université Grenoble Alpes (FR)
Agence Nationale de la Recherche
Industry, innovation and infrastructure
Openalex Percentile: Top 19%
Diamond and Carbon-based Materials Research
1.55
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