2D Confinement-Driven Epitaxy of Solution-Deposited Cu<sub>2</sub>O on GaAs
Epitaxial cuprous oxide (Cu2O) thin films were deposited from aqueous alkaline solutions within confined microsquares in micropatterned GaAs. Raman spectroscopy and transmission electron microscopy analysis revealed the presence of single-phase Cu2O, with no detectable CuO impurity. In contrast to (110) textured polycrystalline Cu2O films obtained on unpatterned substrates, monocrystalline Cu2O (100) films were obtained within the GaAs microsquares. It was found that a 45° in-plane rotation of the prefabricated microsquares with respect to the [01̅1] GaAs axis promotes Cu2O (100) monocrystalline growth by minimizing lattice mismatch and providing optimal substrate/film orientation for growth. The thickness of the Cu2O film and the growth rate within the confined squares emerge as dominant parameters affecting crystal quality and controlling photoluminescence emission, as evidenced by formation of point defects, primarily oxygen vacancies.
Authors
- Vladimir Ezersky (ORCID: https://orcid.org/0000-0002-1719-1750)
- Mariela J. Pavan (ORCID: https://orcid.org/0000-0002-9512-2160)
- Yuval Golan (ORCID: https://orcid.org/0000-0003-1369-0285)
- Nitzan Maman
- Alexander Rashkovskiy (ORCID: https://orcid.org/0000-0002-7140-143X)
- Taissia Rudnikov-Keinan
- Shachar Mishraki
- Shir Gefen
Institutions
- Ben-Gurion University of the Negev (IL)
- Center for Nanoscale Science and Technology (US)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2025-04-09
- DOI
- https://doi.org/10.1021/acsaelm.5c00074
- Citations
- 1
- Primary Topic
- Copper-based nanomaterials and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.52