REMNA: Variation-Resilient and Energy-Efficient MLC FeFET Computing-in-Memory Using NAND Flash-Like Read and Adaptive Control

Nonvolatile memory (NVM)-based computing-in-memory (CiM) has shown promising prospects in deep neural network (DNN) inference at the edge thanks to its nonvolatility and high density. Moreover, most NVMs support multi-level cell (MLC) storage, which can further boost energy efficiency and storage density. However, MLC NVM-based CiMs suffer from degraded accuracy due to device nonidealities, including large variations, nonlinear current distribution, and state drifts. Although prior works have explored various mitigation measures, such as hybrid SLC/MLC, write-and-verify, and local recovery units, the substantial costs from software support, energy, latency, and area still limit the performance. Therefore, the tradeoff between inference accuracy, storage density and compute density has become a vital challenge in NVM-based CiMs.

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Publication Details

Published
2024-10-27
DOI
https://doi.org/10.1145/3676536.3676715
Citations
2
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.42

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article

REMNA: Variation-Resilient and Energy-Efficient MLC FeFET Computing-in-Memory Using NAND Flash-Like Read and Adaptive Control

Yixin Xu, Huazhong Yang, Hongtao Zhong, Kai Ni et al.
2 citations
Ferroelectric and Negative Capacitance Devices
0.42
article

REMNA: Variation-Resilient and Energy-Efficient MLC FeFET Computing-in-Memory Using NAND Flash-Like Read and Adaptive Control

Yixin Xu, Huazhong Yang, Hongtao Zhong, Kai Ni, Thomas Kämpfe, Xueqing Li, Vijaykrishnan Narayanan, Taixin Li
article en
2 citations

Abstract

Nonvolatile memory (NVM)-based computing-in-memory (CiM) has shown promising prospects in deep neural network (DNN) inference at the edge thanks to its nonvolatility and high density. Moreover, most NVMs support multi-level cell (MLC) storage, which can further boost energy efficiency and storage density. However, MLC NVM-based CiMs suffer from degraded accuracy due to device nonidealities, including large variations, nonlinear current distribution, and state drifts. Although prior works have explored various mitigation measures, such as hybrid SLC/MLC, write-and-verify, and local recovery units, the substantial costs from software support, energy, latency, and area still limit the performance. Therefore, the tradeoff between inference accuracy, storage density and compute density has become a vital challenge in NVM-based CiMs.

University of Notre Dame (US), Pennsylvania State University (US), Fraunhofer Institute for Photonic Microsystems (DE), Tsinghua University (CN)
National Science Foundation, National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 35%
Ferroelectric and Negative Capacitance Devices
0.42
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