Tunable structural and optical properties of Bi<sub>2</sub>Se<sub><i>x</i></sub>Te<sub>3−<i>x</i></sub> thin films: implications for nonlinear optical applications
In this work, we successfully fabricated a series of Bi<sub>2</sub>Se<sub><i>x</i></sub>Te<sub>3-<i>x</i></sub> thin films with similar thickness using radio-frequency magnetron sputtering. The influence of elemental composition on the films' structure, optical constants, optical band gap, and nonlinear absorption properties was studied by techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, spectroscopic ellipsometry, spectrophotometry, and open-aperture Z-scan. Linear optical property measurements indicate that as the proportion of Te increases, the metallic characteristics of the films are enhanced, which is reflected in a decrease in the refractive index, an increase in the extinction coefficient, and a redshift of the optical bandgap. Regarding nonlinear absorption properties, the annealed crystalline Bi<sub>2</sub>Te<sub>3</sub> thin film exhibits the largest modulation depth, with its nonlinear optical absorption coefficient approximately eight times that of the amorphous Bi<sub>2</sub>Se<sub>3</sub> thin film. However, the amorphous Bi<sub>2</sub>Se<sub>3</sub> thin film possesses the highest damage threshold. All Bi<sub>2</sub>Se<sub><i>x</i></sub>Te<sub>3-<i>x</i></sub> thin films display saturable absorption behavior and exhibit large third-order nonlinear optical absorption coefficients, suggesting their potential as promising materials in ultrafast nonlinear optics. Our findings indicate the optical properties of Bi<sub>2</sub>Se<sub><i>x</i></sub>Te<sub>3-<i>x</i></sub> thin films can be effectively tuned through composition adjustment, demonstrating the potential device application in mode-locked lasers, Q-switching, all-optical diodes, and so on.
Authors
- Ertao Hu (ORCID: https://orcid.org/0000-0002-7659-9422)
- Tengfei Zhang (ORCID: https://orcid.org/0000-0003-2746-2099)
- Jingze Liu (ORCID: https://orcid.org/0009-0004-8126-2527)
- Jing Li (ORCID: https://orcid.org/0000-0001-9019-7449)
- Jiawei Wang (ORCID: https://orcid.org/0000-0002-8606-6873)
- Junhua Wang (ORCID: https://orcid.org/0000-0002-0885-8234)
- Menghan Li (ORCID: https://orcid.org/0009-0002-9907-8993)
- Shubo Zhang (ORCID: https://orcid.org/0000-0003-0760-7668)
- Shenjin Wei
Institutions
- Fudan University (CN)
- Nanjing University of Posts and Telecommunications (CN)
Publication Details
- Journal
- Physical Chemistry Chemical Physics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5cp00264h
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 0.00