Flexible transparent layered metal oxides for organic devices
The performance of LMO-based devices exceeds that of devices constructed with the ITO. The defect-induced gap states act as Anderson–Mott localized quantum states, creating efficient conduction pathways within the LMO electrodes.
Authors
- Qiang Zhu (ORCID: https://orcid.org/0000-0001-7460-2715)
- Zheng‐Hong Lu (ORCID: https://orcid.org/0000-0003-2050-0822)
- H.Y. Yu (ORCID: https://orcid.org/0000-0002-1527-8756)
- J. Su (ORCID: https://orcid.org/0009-0006-4625-0154)
- Dengke Wang (ORCID: https://orcid.org/0000-0002-3749-605X)
- Changsheng Shi (ORCID: https://orcid.org/0000-0001-7970-8885)
- Zhenxin Yang (ORCID: https://orcid.org/0009-0009-9244-2490)
- Tao Zhang (ORCID: https://orcid.org/0009-0009-3559-7912)
- Peicheng Li (ORCID: https://orcid.org/0000-0002-9984-1365)
- Nan Chen (ORCID: https://orcid.org/0000-0002-1071-1530)
- Nan Jiang (ORCID: https://orcid.org/0000-0002-2168-7855)
Institutions
- University of Toronto (CA)
- Yunnan University (CN)
- Kunming Medical University (CN)
- Southern University of Science and Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4tc05338a
- Citations
- 3
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- National Natural Science Foundation of China