Intrinsically Stretchable Resistive Memory Devices Utilizing Wavy Structured Strategy Integrated with Metal‐Organic Framework Glasses

Flexible resistive random-access memory (RRAM) holds significant promise for data storage applications in the realms of smart healthcare and wearable devices. However, most research has focused primarily on the development of stretchable electrodes, frequently neglecting the mechanical compatibility between the functional layer and the electrode. Consequently, the advancement of intrinsically stretchable memristors presents a substantial challenge. Herein, a glassy metal-organic framework (MOF) film with a wrinkle structure is integrated with a pre-stretched electrode to fabricate intrinsically stretchable memristors. These devices demonstrate an impressive switching ratio of up to 10⁵, a bending radius limit of 10 mm, and a strain limit of 20%, all while maintaining stable switching characteristics. Furthermore, conductive atomic force microscope (C-AFM) and focused ion beam (FIB) techniques reveal that the resistive switching effect is primarily governed by the silver conductive filament mechanism. This work successfully developed an intrinsically stretchable memristor, paving the way for the application of MOFs as functional layers in flexible electronics. It is expected to inspire further application of MOFs in the design of high-performance, flexible electronic technologies.