Influence of Electron Beam Irradiation on Network Carbon Nanotube Films Based Field Effect Transistors

Abstract Semiconducting single‐walled carbon nanotube random network thin films (network CNTs) hold promising applications in nanoelectronic devices. However, exposure to electron beam irradiation during characterization and fabrication of network CNTs via tools like scanning electron microscope (SEM) and e‐beam lithography (EBL) is often unavoidable and may degrade network CNT field effect transistors (FETs). This study investigates the influences of SEM electron beam irradiation on network CNT FETs, focusing on dose, energy, and dose rate, with the on‐state current ( I on ) as the primary metric. At lower doses (≤7.2 × 10 14 e cm −2 ), I on exhibits a temporary reduction, while recovering mostly within 60 min in the ambient environment. At higher doses (>2.9 × 10 15 e cm −2 ), I on decreases significantly and persistently. The observed phenomena can be attributed to the charging of the SiO 2 substrate and defect formation in the SiO 2 substrate. The findings provide insights for optimizing electron beam‐based techniques in the characterization of network CNT FETs and device fabrication.