Deterministic control of magnetic skyrmion motions via engineered potential wells

Magnetic skyrmions, characterized by their topological protection, nanoscale size, and low driving current density, hold immense promise for next-generation ultradense memory and logic devices. However, the skyrmion Hall effect (SkHE) deflects their motion trajectory and often leads to annihilation at nanotrack edges, posing significant challenges for practical spintronic applications. In this work, we proposed an approach to guide skyrmion motion along predefined paths through the engineering of potential well lines, which is achieved by modulating local material parameters, such as magnetocrystalline anisotropy and exchange stiffness constant. Micromagnetic simulations demonstrate that this method effectively suppresses the SkHE, enabling skyrmions to follow designed trajectories. Additionally, the proposed method facilitates the alignment and sorting of multiple skyrmions from random distributions and proves effective for complex trajectory shapes, such as bends and waves. These findings provide a robust framework for the development of skyrmion-based information processing and storage devices, bridging the gap between theoretical potential and practical implementation.

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Publication Details

Journal
Applied Physics Letters
Published
2025-04-01
DOI
https://doi.org/10.1063/5.0257778
Citations
6
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
7.48

Funders

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article

Deterministic control of magnetic skyrmion motions via engineered potential wells

Xiao‐Xue Yang, Qi-Shuo Wang, Hongyan Zhang, Xiao-Ping Ma et al.
6 citations
Applied Physics Letters
Magnetic properties of thin films
7.48
article

Deterministic control of magnetic skyrmion motions via engineered potential wells

Xiao‐Xue Yang, Qi-Shuo Wang, Hongyan Zhang, Xiao-Ping Ma, Zhaochu Luo, Kangjie Tian, Hong‐Guang Piao
article en
6 citations

Abstract

Magnetic skyrmions, characterized by their topological protection, nanoscale size, and low driving current density, hold immense promise for next-generation ultradense memory and logic devices. However, the skyrmion Hall effect (SkHE) deflects their motion trajectory and often leads to annihilation at nanotrack edges, posing significant challenges for practical spintronic applications. In this work, we proposed an approach to guide skyrmion motion along predefined paths through the engineering of potential well lines, which is achieved by modulating local material parameters, such as magnetocrystalline anisotropy and exchange stiffness constant. Micromagnetic simulations demonstrate that this method effectively suppresses the SkHE, enabling skyrmions to follow designed trajectories. Additionally, the proposed method facilitates the alignment and sorting of multiple skyrmions from random distributions and proves effective for complex trajectory shapes, such as bends and waves. These findings provide a robust framework for the development of skyrmion-based information processing and storage devices, bridging the gap between theoretical potential and practical implementation.

Applied Physics LettersVol. 126(14)
Yanbian University (CN), Peking University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 3%
Magnetic properties of thin films
7.48
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