Pressure-tuning ferroelectric relaxation process in BaFe4O7

Low-energy ferroelectric photocurrent switches hold promise for optoelectronic devices and digital logic gates. Pressure, a clean and efficient method for microstructure tuning, can significantly affect the polarization photocurrent relaxation process. Upon negative poling, the photocurrent switching in a narrow bandgap ferroelectric BaFe4O7 single crystal from a negative direction to a positive direction during polarization photocurrent relaxation was observed under pressure. Notably, this photocurrent switching time (τ) is boosted up by more than ten folds, from 0.2 to 5 GPa, followed by a slow reduction to around 20 GPa. The very low pressure (0.2 GPa) that induces the PPR process and the τ tuned by slight lattice distortions highlight the feasibility of environmental pressure control of PPR in ferroelectric materials for practical applications. This pressure-induced behavior arises from the coupled effect of the ferroelectric remanent field and micro-ferroelectric domain relaxation process after the external poling electric field is removed. The broad range of switching times under pressure allows one to precisely control the photoelectric switch applications.

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Publication Details

Journal
Applied Physics Letters
Published
2025-04-01
DOI
https://doi.org/10.1063/5.0264337
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Pressure-tuning ferroelectric relaxation process in BaFe4O7

Jiayi Guan, Limin Yan, Xuqiang Liu, Yong Jiang et al.
4 links
Applied Physics Letters
Ferroelectric and Piezoelectric Materials
article

Pressure-tuning ferroelectric relaxation process in BaFe4O7

Jiayi Guan, Limin Yan, Xuqiang Liu, Yong Jiang, Wenge Yang, Ganghua Zhang, Bihan Wang, Zhen Liu, Mingtao Li, Nana Li, Xiang Li
article en

Abstract

Low-energy ferroelectric photocurrent switches hold promise for optoelectronic devices and digital logic gates. Pressure, a clean and efficient method for microstructure tuning, can significantly affect the polarization photocurrent relaxation process. Upon negative poling, the photocurrent switching in a narrow bandgap ferroelectric BaFe4O7 single crystal from a negative direction to a positive direction during polarization photocurrent relaxation was observed under pressure. Notably, this photocurrent switching time (τ) is boosted up by more than ten folds, from 0.2 to 5 GPa, followed by a slow reduction to around 20 GPa. The very low pressure (0.2 GPa) that induces the PPR process and the τ tuned by slight lattice distortions highlight the feasibility of environmental pressure control of PPR in ferroelectric materials for practical applications. This pressure-induced behavior arises from the coupled effect of the ferroelectric remanent field and micro-ferroelectric domain relaxation process after the external poling electric field is removed. The broad range of switching times under pressure allows one to precisely control the photoelectric switch applications.

Applied Physics LettersVol. 126(14)
Beijing Institute of Technology (CN), Mongolian University of Science and Technology (MN), Chinese Academy of Sciences (CN), Deutsches Elektronen-Synchrotron DESY (DE), Shanghai Advanced Research Institute (CN), Center for High Pressure Science and Technology Advanced Research (CN), Shanghai Institute of Technology (CN)
National Natural Science Foundation of China, National Postdoctoral Program for Innovative Talents, National Key Research and Development Program of China
Openalex Percentile: Top 95%
Ferroelectric and Piezoelectric Materials
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