Spin–orbit coupling and quantum linear magnetoresistance of PbTe thin films

We have achieved the epitaxial growth of PbTe thin films on SrTiO3 substrates. The in-plane magnetoconductivity exhibits a transition from a quadratic to a linear relationship as the applied magnetic field approaches a critical threshold B*, with the critical field B* characterizing a quadratic temperature dependence, revealing the quantum nature of the linear magnetoresistance. The three-dimensional (3D) nature of weak anti-localization combined with the observed angular dependence anisotropy in magnetoresistance and Hall resistance ρxy, further indicates that spin–orbit coupling plays a special role in these phenomena. Additionally, the anisotropy can be attributed to a combination of factors, including electron–electron interactions and electron–phonon interactions, strain effects, and the intricate interplay between classical and quantum transport phenomena.

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Publication Details

Journal
Applied Physics Letters
Published
2025-04-01
DOI
https://doi.org/10.1063/5.0259771
Citations
1
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
1.25

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article

Spin–orbit coupling and quantum linear magnetoresistance of PbTe thin films

Weiwei Zhao, Kang Li, Huizhen Li
1 citations
Applied Physics Letters
Topological Materials and Phenomena
1.25
article

Spin–orbit coupling and quantum linear magnetoresistance of PbTe thin films

Weiwei Zhao, Kang Li, Huizhen Li
article en
1 citations

Abstract

We have achieved the epitaxial growth of PbTe thin films on SrTiO3 substrates. The in-plane magnetoconductivity exhibits a transition from a quadratic to a linear relationship as the applied magnetic field approaches a critical threshold B*, with the critical field B* characterizing a quadratic temperature dependence, revealing the quantum nature of the linear magnetoresistance. The three-dimensional (3D) nature of weak anti-localization combined with the observed angular dependence anisotropy in magnetoresistance and Hall resistance ρxy, further indicates that spin–orbit coupling plays a special role in these phenomena. Additionally, the anisotropy can be attributed to a combination of factors, including electron–electron interactions and electron–phonon interactions, strain effects, and the intricate interplay between classical and quantum transport phenomena.

Applied Physics LettersVol. 126(14)
Harbin Institute of Technology (CN), Smart Material (Germany) (DE), Printed Electronics (United Kingdom) (GB)
National Natural Science Foundation of China
Openalex Percentile: Top 22%
Topological Materials and Phenomena
1.25
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Spin–orbit coupling and quantum linear magnetoresistance of PbTe thin films — Weiwei Zhao, Kang Li, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS