Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy
Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation displays because of their eco-friendliness, exceptional optoelectronic properties, and cost-effective solution processability. However, their electroluminescence performance still lags behind their lead (Pb) counterparts, primarily due to the undesired Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> oxidation to Sn4+ and the rapid crystallization of Sn-based perovskite, resulting in high defect density as well as poor film quality. Herein, we reported a competitive antioxidation strategy by utilizing a phosphorus ylide, namely (triphenylphosphoranilidene) acetaldehyde (TPPA), to suppress the oxidation of Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> and regulate the growth kinetics, simultaneously. The TPPA with highly active polar phosphorus-carbon bonds can be oxidized prior to Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup>, and their large steric hindrance can slow down the crystallization process of tin-based perovskite. Moreover, the main product from the oxidation reaction, namely triphenylphosphine oxide (TPPO), can further passivate defects by coordinating with SnI<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> octahedra. The resulting Sn-based perovskite film exhibits enhanced optical properties and uniform, dense morphology. Leveraging these improvements, the optimized PeLED delivers pure-red light emission with Commission Internationale de L’Eclairage (CIE) color coordinates of (0.69, 0.30), an external quantum efficiency (EQE) of 8.1% and maximum luminance of 672 cd m<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup>. This work provides a facile route to enhance the overall performance of Sn-based PeLEDs.
Authors
- Lin Wang (ORCID: https://orcid.org/0000-0002-2599-9688)
- Sitao Huo
- Yingguo Yang (ORCID: https://orcid.org/0000-0002-1749-2799)
- Xuyong Yang (ORCID: https://orcid.org/0000-0003-3597-1491)
- Yuxin Shi (ORCID: https://orcid.org/0009-0007-3800-9122)
- Sheng Wang (ORCID: https://orcid.org/0009-0001-1477-4272)
- Xiaofei Zhang (ORCID: https://orcid.org/0000-0001-9961-507X)
- Yingqun Gong
- Lingmei Kong
Institutions
- Shanghai University (CN)
- Seoul National University (KR)
- Chinese Academy of Sciences (CN)
- Shanghai Advanced Research Institute (CN)
- Tianma Microelectronics (China) (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-04-08
- DOI
- https://doi.org/10.1109/led.2025.3558338
- Citations
- 1
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China
- Shanghai Minhang Science and Technology Commission
- National Key Research and Development Program of China