Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy

Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation displays because of their eco-friendliness, exceptional optoelectronic properties, and cost-effective solution processability. However, their electroluminescence performance still lags behind their lead (Pb) counterparts, primarily due to the undesired Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> oxidation to Sn4+ and the rapid crystallization of Sn-based perovskite, resulting in high defect density as well as poor film quality. Herein, we reported a competitive antioxidation strategy by utilizing a phosphorus ylide, namely (triphenylphosphoranilidene) acetaldehyde (TPPA), to suppress the oxidation of Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> and regulate the growth kinetics, simultaneously. The TPPA with highly active polar phosphorus-carbon bonds can be oxidized prior to Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup>, and their large steric hindrance can slow down the crystallization process of tin-based perovskite. Moreover, the main product from the oxidation reaction, namely triphenylphosphine oxide (TPPO), can further passivate defects by coordinating with SnI<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> octahedra. The resulting Sn-based perovskite film exhibits enhanced optical properties and uniform, dense morphology. Leveraging these improvements, the optimized PeLED delivers pure-red light emission with Commission Internationale de L’Eclairage (CIE) color coordinates of (0.69, 0.30), an external quantum efficiency (EQE) of 8.1% and maximum luminance of 672 cd m<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup>. This work provides a facile route to enhance the overall performance of Sn-based PeLEDs.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-04-08
DOI
https://doi.org/10.1109/led.2025.3558338
Citations
1
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.73

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article

Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy

Lin Wang, Sitao Huo, Yingguo Yang, Xuyong Yang et al.
1 citations
IEEE Electron Device Letters
Perovskite Materials and Applications
0.73
article

Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy

Lin Wang, Sitao Huo, Yingguo Yang, Xuyong Yang, Yuxin Shi, Sheng Wang, Xiaofei Zhang, Yingqun Gong, Lingmei Kong
article en
1 citations

Abstract

Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation displays because of their eco-friendliness, exceptional optoelectronic properties, and cost-effective solution processability. However, their electroluminescence performance still lags behind their lead (Pb) counterparts, primarily due to the undesired Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> oxidation to Sn4+ and the rapid crystallization of Sn-based perovskite, resulting in high defect density as well as poor film quality. Herein, we reported a competitive antioxidation strategy by utilizing a phosphorus ylide, namely (triphenylphosphoranilidene) acetaldehyde (TPPA), to suppress the oxidation of Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> and regulate the growth kinetics, simultaneously. The TPPA with highly active polar phosphorus-carbon bonds can be oxidized prior to Sn<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup>, and their large steric hindrance can slow down the crystallization process of tin-based perovskite. Moreover, the main product from the oxidation reaction, namely triphenylphosphine oxide (TPPO), can further passivate defects by coordinating with SnI<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> octahedra. The resulting Sn-based perovskite film exhibits enhanced optical properties and uniform, dense morphology. Leveraging these improvements, the optimized PeLED delivers pure-red light emission with Commission Internationale de L’Eclairage (CIE) color coordinates of (0.69, 0.30), an external quantum efficiency (EQE) of 8.1% and maximum luminance of 672 cd m<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup>. This work provides a facile route to enhance the overall performance of Sn-based PeLEDs.

IEEE Electron Device LettersVol. 46(6)
Shanghai University (CN), Seoul National University (KR), Chinese Academy of Sciences (CN), Shanghai Advanced Research Institute (CN), Tianma Microelectronics (China) (CN)
National Natural Science Foundation of China, Shanghai Minhang Science and Technology Commission, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 30%
Perovskite Materials and Applications
0.73
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