Influence of Nd₂O₃-doped PVA interlayer on the optoelectrical response of a photodiode

Abstract This study examines the photovoltaic properties of a Schottky photodiode (PD) based on the Au/PVA:Nd 2 O 3 /n-Si structure under various light and dark conditions. A PVA polymer layer doped with Nd2O3 is applied to the metal-semiconductor (MS) interface to form a metal-nanocomposite-semiconductor (MNS) Schottky PD. Characterization of the PVA:Nd 2 O 3 nanocomposite is conducted using Fourier Transform Infrared (FTIR) and Attenuated Total Reflection (ATR) analyses. Key electronic properties such as reverse-saturation current (I 0 ), ideality factor (n), series/shunt resistances (R s /R sh ), barrier height (Φ B0 ), interface state density (N ss ), photocurrent (I ph ), photosensitivity (S), optical responsivity (R), and specific detectivity (D*) are analyzed. The nanocomposite enhances photosensitivity, responsivity, and detectivity by 1.7 × 10 4 , 4.79 A W −1 , and 1.07 × 10 12 Jones, respectively. Results demonstrate that the Au/PVA:Nd 2 O 3 /n-Si structure exhibits excellent photo-response, making it a potential replacement for traditional MS-type Schottky PDs in optoelectronics and solar applications.