Two-dimensional Czochralski method for large-scale single-crystal MoS2

Two-dimensional (2D) materials, such as MoS 2 and hexagonal boron nitride (hBN), are poised to redefine the future of electronics by enabling ultra-scaled transistors, flexible devices, and energy-efficient integrated circuits.Their atomic thickness and exceptional electronic properties position them as key enablers for extending Moore's Law beyond the limits of traditional silicon-based technologies[1].Nevertheless, their industrial-scale implementation remains constrained by limitations in the batch production of large-scale high-quality 2D materials[2].Thus, the capacity to synthesize large-scale 2D materials represents an essential prerequisite for the fabrication of next-generation integrated circuits.Moreover, the presence of grain boundaries in 2D materials induces carrier scattering, significantly degrading the performance of electronic devices[3].Hence, stringent control of grain boundaries and