Highly Efficient Perovskite Heterojunction Solar Cell With Dual Absorber Layers for State of Art Photovoltaic Technologies

Perovskite solar cells (PSCs) face significant challenges, including instability, high recombination losses, poor charge transport, and suboptimal band alignment, which limit their efficiency and commercial viability. The previous studies relied on MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as an ETL, which has poor conduction band alignment with CsPbI<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>, resulting in high resistance and inefficient charge extraction. This study overcomes these limitations and objectives by introducing MoSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as a dual absorber, leveraging advantageous characteristics such as its strong infrared absorption, high carrier mobility, enhanced band alignment, optimal layer thickness, controlled defect levels, tailored doping concentrations, and minimized interface defects, all of which improve charge carrier transport and optimize generation and recombination dynamics. Also, defect passivation at the MoSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>/CsPbI<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interface lowers the number of trap states, which lowers recombination and raises Voc. The replacement of organic HTLs with CFTS further enhances device stability and longevity. The simulation yielded remarkable photovoltaic parameters, achieving an open-circuit voltage (Voc) of 1.40 V, a short-circuit current density (Jsc) of 35.81 mA/cm2, a fill factor (FF) of 82.9%, and an exceptional power conversion efficiency (PCE) of 41.86%, approaching the Shockley-Queisser theoretical efficiency limit for heterojunction solar cells. The proposed architecture offers a roadmap for future experimental work, semiconductor device simulation, modeling in high-efficiency and stable perovskite heterojunction solar cells for next-generation photovoltaic technology.

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Publication Details

Journal
IEEE Access
Published
2025-01-01
DOI
https://doi.org/10.1109/access.2025.3558867
Citations
12
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
8.77
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article

Highly Efficient Perovskite Heterojunction Solar Cell With Dual Absorber Layers for State of Art Photovoltaic Technologies

Umakanta Nanda, G. Venkateswarlu
12 citations
IEEE Access
Perovskite Materials and Applications
8.77
article

Highly Efficient Perovskite Heterojunction Solar Cell With Dual Absorber Layers for State of Art Photovoltaic Technologies

Umakanta Nanda, G. Venkateswarlu
article en
12 citations

Abstract

Perovskite solar cells (PSCs) face significant challenges, including instability, high recombination losses, poor charge transport, and suboptimal band alignment, which limit their efficiency and commercial viability. The previous studies relied on MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as an ETL, which has poor conduction band alignment with CsPbI<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>, resulting in high resistance and inefficient charge extraction. This study overcomes these limitations and objectives by introducing MoSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as a dual absorber, leveraging advantageous characteristics such as its strong infrared absorption, high carrier mobility, enhanced band alignment, optimal layer thickness, controlled defect levels, tailored doping concentrations, and minimized interface defects, all of which improve charge carrier transport and optimize generation and recombination dynamics. Also, defect passivation at the MoSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>/CsPbI<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interface lowers the number of trap states, which lowers recombination and raises Voc. The replacement of organic HTLs with CFTS further enhances device stability and longevity. The simulation yielded remarkable photovoltaic parameters, achieving an open-circuit voltage (Voc) of 1.40 V, a short-circuit current density (Jsc) of 35.81 mA/cm2, a fill factor (FF) of 82.9%, and an exceptional power conversion efficiency (PCE) of 41.86%, approaching the Shockley-Queisser theoretical efficiency limit for heterojunction solar cells. The proposed architecture offers a roadmap for future experimental work, semiconductor device simulation, modeling in high-efficiency and stable perovskite heterojunction solar cells for next-generation photovoltaic technology.

IEEE AccessVol. 13
SRM University (IN), VIT-AP University
Affordable and clean energy
Openalex Percentile: Top 2%
Perovskite Materials and Applications
8.77
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