Interfacial defect engineering to boost deep-ultraviolet photodetection based on a wide-bandgap semiconductor heterostructure
β-Ga 2 O 3 photodetectors achieve high detection performance under a low supply voltage and superweak light intensity via interfacial defect engineering.
Authors
- Weihua Tang (ORCID: https://orcid.org/0000-0002-8771-3120)
- Zeng Liu (ORCID: https://orcid.org/0000-0003-3215-7929)
- Yuehui Wang (ORCID: https://orcid.org/0000-0002-7902-2813)
- Jun Miao (ORCID: https://orcid.org/0000-0002-6924-0737)
- Shulin Sha
- Lincong Shu (ORCID: https://orcid.org/0009-0008-3182-3209)
- Zhenping Wu (ORCID: https://orcid.org/0000-0003-2986-8068)
- Shan Li (ORCID: https://orcid.org/0000-0002-2905-8455)
- Qinghua Zhang (ORCID: https://orcid.org/0000-0003-1350-6388)
- Qiang Li (ORCID: https://orcid.org/0000-0001-9522-5234)
- Han Wu
- Xianran Xing (ORCID: https://orcid.org/0000-0003-0704-8886)
- Sihan Yan
- Jiaying Shen
- Kun Lin
Institutions
- Beijing University of Posts and Telecommunications (CN)
- Chinese Academy of Sciences (CN)
- Peking University (CN)
- Inner Mongolia University (CN)
- Nanjing University of Posts and Telecommunications (CN)
- Institute of Physics (CN)
- University of Science and Technology Beijing (CN)
- Nanjing University of Aeronautics and Astronautics (CN)
Publication Details
- Journal
- Inorganic Chemistry Frontiers
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5qi00691k
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00