Correction: An ion-gating synaptic memristor based on tri-layer HfO<sub><i>x</i></sub> composition regulation
Correction for ‘An ion-gating synaptic memristor based on tri-layer HfO x composition regulation’ by Lanqing Zou et al. , J. Mater. Chem. C , 2025, 13 , 5326–5331, https://doi.org/10.1039/D4TC04564E.
Authors
- Jiawang Ren
- Yunhui Yi (ORCID: https://orcid.org/0000-0001-7979-332X)
- Qiang He (ORCID: https://orcid.org/0000-0002-2607-4556)
- Huajun Sun (ORCID: https://orcid.org/0000-0003-0755-5247)
- Sheng Hu (ORCID: https://orcid.org/0000-0001-6500-4983)
- Weiming Cheng (ORCID: https://orcid.org/0000-0002-9676-2178)
- Lanqing Zou
- Lei Ye (ORCID: https://orcid.org/0000-0002-6529-6178)
- Jun Zhang (ORCID: https://orcid.org/0000-0002-0644-9154)
- Xiangshui Miao (ORCID: https://orcid.org/0000-0002-3999-7421)
- Jiyang Xu
- Chuqian Zhu
Institutions
- Taiwan Semiconductor Manufacturing Company (China) (CN)
- Huazhong University of Science and Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc90053k
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China