Increasing the sensitivity of a non-chemically amplified molecular resist by cascade esterification
A non-chemically amplified molecular resist based on γ-hydroxy carboxylate and triphenylsulfonium groups was developed for EBL and EUVL, resolving 22 and 20 nm patterns at low exposure doses of 160 μC cm −2 and 13.3 mJ cm −2 , respectively.
Authors
- Yi C. Zeng (ORCID: https://orcid.org/0000-0001-9964-0929)
- Jinping Chen
- Jun Zhao (ORCID: https://orcid.org/0000-0002-9876-3094)
- Xudong Guo (ORCID: https://orcid.org/0000-0002-6111-3231)
- Guoqiang Yang (ORCID: https://orcid.org/0000-0003-0473-9219)
- Huining Wang (ORCID: https://orcid.org/0000-0003-4030-0270)
- Hu Rui
- Yi Li (ORCID: https://orcid.org/0000-0002-2092-4505)
- Shuangqing Wang (ORCID: https://orcid.org/0000-0002-1671-218X)
- Yanqing Wu (ORCID: https://orcid.org/0009-0009-1457-1334)
- Tianjun Yu
Institutions
- Chinese Academy of Sciences (CN)
- Shanghai Advanced Research Institute (CN)
- Technical Institute of Physics and Chemistry (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- RSC Applied Interfaces
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5lf00009b
- Citations
- 3
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences