Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination

In this work, a guard array termination structure using hydrogen plasma technology (H-GAT) was proposed for multi-kV AlGaN/GaN heterojunction Schottky barrier diodes. A highest breakdown voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BV</i>) of 9.5 kV, a specific on-resistance (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R_ON</i>) of 97 Ω·mm, and a capacitance at zero bias (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C_j0</i>) of 4.2 pF/mm were achieved on p-GaN/AlGaN/GaN-on-SiC platform. The fabrication process using hydrogen plasma termination was simple and easy to implement compared with other technologies used in multi-kV devices. This work provides an effective alternative route for the future development of low-cost, high-voltage 10 kV-class GaN power electronics.