Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Abstract Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 nm. The gate fingers have low gate leakage. As a proof of principle, we fabricated quantum dot devices using InAs nanowires placed on the gate fingers. These devices exhibit single electron tunneling and Coulomb blockade.
Authors
- Anton Faustmann
- Benjamin Bennemann (ORCID: https://orcid.org/0000-0003-4071-019X)
- Thomas Schäpers (ORCID: https://orcid.org/0000-0001-7861-5003)
- Mihail Ion Lepsa (ORCID: https://orcid.org/0000-0001-7094-7126)
- Joachim Knoch (ORCID: https://orcid.org/0000-0001-5136-9287)
- Patrick Liebisch (ORCID: https://orcid.org/0000-0002-5975-4734)
- Alexander Pawlis (ORCID: https://orcid.org/0000-0002-3394-0707)
- Detlev Grützmacher (ORCID: https://orcid.org/0000-0001-6290-9672)
- Pujitha Perla
Institutions
- Forschungszentrum Jülich (DE)
- Jülich Aachen Research Alliance (DE)
- RWTH Aachen University (DE)
Publication Details
- Journal
- Semiconductor Science and Technology
- Published
- 2025-04-07
- DOI
- https://doi.org/10.1088/1361-6641/adc9db
- Primary Topic
- Nanowire Synthesis and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Deutsche Forschungsgemeinschaft