Deformation Mechanism of Indium Phosphide Wafers by Indenter Shape in Nanoindentation

Molecular dynamics (MD) simulations of nanoindentation were employed to investigate the mechanical properties and elastoplastic deformation mechanisms of single-crystal indium phosphide (B3-InP) wafers oriented along the [001] crystal direction. The study examines the evolution of dislocation propagation, atomic motion, stress distribution, and strain evolution under varying indenter geometries, including Ball, Berkovich, and Vickers indenters. The results reveal that as the indentation depth increases, the pop-in phenomenon occurs first with the Ball indenter and last with the Vickers indenter, suggesting that the pop-in phenomenon is more pronounced and plastic deformation initiates more rapidly with indenters exhibiting more homogeneous stress distributions compared to those with concentrated stress distributions. Regardless of indenter shape, generated dislocations primarily consist of Shockley dislocations, with a smaller presence of perfect dislocations. These dislocations exhibit atomic displacement and slip along the ⟨110⟩ crystalline direction.

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2025-04-07
DOI
https://doi.org/10.1021/acs.jpcc.5c01363
Citations
7
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
5.11

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article

Deformation Mechanism of Indium Phosphide Wafers by Indenter Shape in Nanoindentation

Hui Feng, Zhihui Bai, Jie Geng, Jiayun Deng et al.
7 citations
The Journal of Physical Chemistry C
Semiconductor materials and devices
5.11
article

Deformation Mechanism of Indium Phosphide Wafers by Indenter Shape in Nanoindentation

Hui Feng, Zhihui Bai, Jie Geng, Jiayun Deng, Hua Wei, Feng Qiu, Hanbao Liu, Xiaoning Wen
article en
7 citations

Abstract

Molecular dynamics (MD) simulations of nanoindentation were employed to investigate the mechanical properties and elastoplastic deformation mechanisms of single-crystal indium phosphide (B3-InP) wafers oriented along the [001] crystal direction. The study examines the evolution of dislocation propagation, atomic motion, stress distribution, and strain evolution under varying indenter geometries, including Ball, Berkovich, and Vickers indenters. The results reveal that as the indentation depth increases, the pop-in phenomenon occurs first with the Ball indenter and last with the Vickers indenter, suggesting that the pop-in phenomenon is more pronounced and plastic deformation initiates more rapidly with indenters exhibiting more homogeneous stress distributions compared to those with concentrated stress distributions. Regardless of indenter shape, generated dislocations primarily consist of Shockley dislocations, with a smaller presence of perfect dislocations. These dislocations exhibit atomic displacement and slip along the ⟨110⟩ crystalline direction.

The Journal of Physical Chemistry CVol. 129(15)
ON Semiconductor (United States) (US), Kunming University of Science and Technology (CN), Faculty (United Kingdom) (GB), Shanxi Provincial Institute of Chemical Industry (China) (CN)
Analysis and Testing Foundation of Kunming University of Science and Technology
Openalex Percentile: Top 5%
Semiconductor materials and devices
5.11
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