Transistor-Level Metal Tube in Standard CMOS to Block Flying Crosstalk in BEOL Demonstrated in 38 GHz SPDT

Analog, mixed-signal and radio-frequency (AMX/RF) integrated circuits (IC) are sensitive to noises and interferers. Such crosstalk is particularly problematic to complex chips in advanced technologies. Global flying noises coupling through complex metal interconnects in the backend-of-the-line (BEOL) in CMOS become dominant that cannot be isolated using traditional in-substrate noise-isolation techniques. This letter reports a novel layout-only transistor-level stacked-via metal tube structure in standard CMOS BEOL to suppress global flying noises on a chip. The new technique is validated in simulation and measurement using 38GHz single-pole double-throw (SPDT) traveling wave switch circuits fabricated in a foundry 45nm silicon-on-insulator (SOI) CMOS technology, demonstrating ~7 dB global noise reduction.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-04-07
DOI
https://doi.org/10.1109/led.2025.3558694
Citations
1
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
0.73
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article

Transistor-Level Metal Tube in Standard CMOS to Block Flying Crosstalk in BEOL Demonstrated in 38 GHz SPDT

Weiquan Hao, Albert Wang, Runyu Miao, Zijin Pan et al.
1 citations
IEEE Electron Device Letters
3D IC and TSV technologies
0.73
article

Transistor-Level Metal Tube in Standard CMOS to Block Flying Crosstalk in BEOL Demonstrated in 38 GHz SPDT

Weiquan Hao, Albert Wang, Runyu Miao, Zijin Pan, Xunyu Li, Zijian Yue
article en
1 citations

Abstract

Analog, mixed-signal and radio-frequency (AMX/RF) integrated circuits (IC) are sensitive to noises and interferers. Such crosstalk is particularly problematic to complex chips in advanced technologies. Global flying noises coupling through complex metal interconnects in the backend-of-the-line (BEOL) in CMOS become dominant that cannot be isolated using traditional in-substrate noise-isolation techniques. This letter reports a novel layout-only transistor-level stacked-via metal tube structure in standard CMOS BEOL to suppress global flying noises on a chip. The new technique is validated in simulation and measurement using 38GHz single-pole double-throw (SPDT) traveling wave switch circuits fabricated in a foundry 45nm silicon-on-insulator (SOI) CMOS technology, demonstrating ~7 dB global noise reduction.

IEEE Electron Device LettersVol. 46(6)
University of California, Riverside (US)
Affordable and clean energy
Openalex Percentile: Top 30%
3D IC and TSV technologies
0.73
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Transistor-Level Metal Tube in Standard CMOS to Block Flying Crosstalk in BEOL Demonstrated in 38 GHz SPDT — Weiquan Hao, Albert Wang, et al. · IEEE Electron Device Letters (2025) | TGRS Research Map | TGRS