Characterization of random telegraph noise in an H2RG X-ray hybrid CMOS detector

Hybrid CMOS detectors (HCDs) have several excellent features as high-performance X-ray detectors, including rapid readout, deep-depletion silicon for high quantum efficiency, radiation hardness, and low power. Random telegraph noise (RTN) is a type of noise that can reduce the performance of HCDs and other CMOS sensors. After finding and quantifying RTN in the recently developed engineering grade Speedster-EXD550 HCDs, this form of noise has also been found in other X-ray HCDs. We aim to investigate its presence and characteristics in the relatively mature H2RG X-ray HCD and to compare it with that of the Speedster-EXD550. We use archival data taken with an H2RG X-ray HCD at two different temperatures to determine the percentage of pixels that are being impacted by RTN. We identify RTN in 0.42% of pixels when the detector is operated at 140 K, but we are only able to identify RTN in 0.060% of pixels when the detector is operated at 160 K. We characterize RTN in two Speedster-EXD550 detectors, identifying 5.1% of pixels with RTN in one detector and 7.1% in another, which is significantly more than the H2RG. These results verify the difference between two different HCDs and provide techniques that can be applied to future HCDs.