Enhanced in-plane polarization in two-dimensional GaInS3 via strain engineering for self-powered photodetector

Self-powered two-dimensional (2D) polarization-sensitive photodetectors have propelled the advancement of the next-generation optoelectronics. However, currently such devices mainly depend on the stacking of multiple 2D heterojunctions to realize this function, which demands precise operational procedures and strict band alignment. Herein, we present the achievement of self-powered polarization photodetection in 2D GaInS 3 via strain engineering. This primarily depends on the intrinsic in-plane anisotropic structure and internal spontaneous polarization of 2D GaInS 3 . Remarkedly, the strained GaInS 3 devices exhibit superior optoelectronic performance with a high on/off ratio (>10 4 ), and large anisotropy ratio (∼5.4). Furthermore, the strained device can achieve self-powered high-resolution polarization imaging. This work offers a guideline valuable for developing high-performance 2D self-powered polarization photodetectors.