Interfacial second harmonic generation switching with multilayer InSe/VO2 heterostructure in telecom band
Interfacial second harmonic generation (SHG) switching mediated by insulator–metal phase transition of VO2 can serve as switchable and ultracompact nonlinear optical elements for on-chip logical optical operations. We propose that enhanced conversion efficiency and switching ratio of interfacial SHG in telecom band can be achieved with multilayer InSe/VO2 heterostructure, which has been comprehensively validated by a theoretical model of interfacial SHG and SHG spectra measurements. Our results provide solid guidance for designing interfacial SHG switching devices of high performance.
Authors
- Jinhao Huang (ORCID: https://orcid.org/0000-0002-2271-8473)
- Yuanyuan Li (ORCID: https://orcid.org/0000-0001-6151-9306)
- Yu Sun (ORCID: https://orcid.org/0000-0003-2066-5053)
- Zeming Qi (ORCID: https://orcid.org/0000-0001-6656-1677)
- L. Qiao (ORCID: https://orcid.org/0009-0005-0272-3370)
- Chongwen Zou (ORCID: https://orcid.org/0000-0002-6153-081X)
- Qiannan Cui (ORCID: https://orcid.org/0000-0003-2675-0689)
- Liang Li (ORCID: https://orcid.org/0000-0001-5262-4593)
- Lu Yin (ORCID: https://orcid.org/0000-0001-9596-3325)
- Jianhua Chang (ORCID: https://orcid.org/0000-0003-4834-2141)
Institutions
- University of Science and Technology of China (CN)
- Nanjing University of Information Science and Technology (CN)
- Southeast University (BD)
- National Synchrotron Radiation Laboratory (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-04-01
- DOI
- https://doi.org/10.1063/5.0260593
- Citations
- 1
- Primary Topic
- Transition Metal Oxide Nanomaterials
- Type
- article
- Field-Weighted Citation Impact
- 0.61
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China