Synaptic solar-blind UV PD based on STO/AlXGa1−XN heterostructure for neuromorphic computing

The rapid advancements in artificial intelligence and high-performance computing have emphasized the need for efficient optoelectronic artificial synapses, essential elements in neuromorphic computing. This study proposes a solar-blind ultraviolet (UV) photodetector (PD) based on the SrTiO3/AlXGa1−XN heterostructure to serve as an optoelectronic synapse. Under 265 nm illumination, the device demonstrates a remarkably low dark current of 1.08 × 10−11 A and an impressive peak responsivity of 36.43 A/W at −15 V. Notably, the UV PD functions as an optoelectronic synapse that emulates a biological neuron, simulating the fundamental operations of various biological synapses. Moreover, the research extends to the promising field of neuromorphic computing. The photoelectric artificial synapse device achieved an exceptional 97.91% accuracy rate in the challenging MNIST handwritten digit recognition task, further validating its potential in neural computing applications.

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Publication Details

Journal
Applied Physics Letters
Published
2025-04-01
DOI
https://doi.org/10.1063/5.0263338
Citations
21
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
15.34

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article

Synaptic solar-blind UV PD based on STO/AlXGa1−XN heterostructure for neuromorphic computing

Guofeng Yang, Chunshuang Chu, Shu Yang, Francis Chi-Chung Ling et al.
21 citations
Applied Physics Letters
Advanced Memory and Neural Computing
15.34
article

Synaptic solar-blind UV PD based on STO/AlXGa1−XN heterostructure for neuromorphic computing

Guofeng Yang, Chunshuang Chu, Shu Yang, Francis Chi-Chung Ling, Shunjie Yu, Shiting Dai, Xiao Wang, Qi Xu
article en
21 citations

Abstract

The rapid advancements in artificial intelligence and high-performance computing have emphasized the need for efficient optoelectronic artificial synapses, essential elements in neuromorphic computing. This study proposes a solar-blind ultraviolet (UV) photodetector (PD) based on the SrTiO3/AlXGa1−XN heterostructure to serve as an optoelectronic synapse. Under 265 nm illumination, the device demonstrates a remarkably low dark current of 1.08 × 10−11 A and an impressive peak responsivity of 36.43 A/W at −15 V. Notably, the UV PD functions as an optoelectronic synapse that emulates a biological neuron, simulating the fundamental operations of various biological synapses. Moreover, the research extends to the promising field of neuromorphic computing. The photoelectric artificial synapse device achieved an exceptional 97.91% accuracy rate in the challenging MNIST handwritten digit recognition task, further validating its potential in neural computing applications.

Applied Physics LettersVol. 126(14)
Jiangnan University (CN), University of Science and Technology of China (CN), Guangdong University of Technology (CN), Chinese University of Hong Kong (HK), University of Hong Kong (HK)
National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program
Openalex Percentile: Top 1%
Advanced Memory and Neural Computing
15.34
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Synaptic solar-blind UV PD based on STO/AlXGa1−XN heterostructure for neuromorphic computing — Guofeng Yang, Chunshuang Chu, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS