Advancing Carriers Mobility in MnSb<sub>2</sub>Te<sub>4</sub> Thermoelectrics via Tailored Textures and Vacancy Modification

Abstract Enhancing carrier mobility plays a crucial role in significantly improving thermoelectric performance. However, due to the lack of a systematic strategy, achieving high mobility remains an elusive goal for most compounds. In this study, the hot‐forging method is applied to polycrystalline MnSb₂Te₄, achieving a remarkable 300% improvement in carrier mobility. Through electron backscattering diffraction microstructural analysis, it is demonstrated how optimizing textures can accelerate carrier movement in MnSb₂Te₄ bulk materials. Moreover, theoretical calculations, combined with experimental positron annihilation spectroscopy, reveal that Te vacancies help counteract intrinsic cation defects, leading to a simultaneous increase in carrier mobility. As a result, the hot‐forged MnSb₂Te₄ specimen, with a diameter of 15 mm, reaches a record‐high maximum figure of merit ( ZT ) value of 1.3 at 773 K and an impressive average ZT of 0.7 between 323 and 773 K. The experimental output efficiency of 4.6%, observed at 773 K on the MnSb₂Te₄‐based single‐leg module, further confirms that the improved transport properties are due to the enhanced carrier mobility. This comprehensive study offers valuable insights into mobility enhancement in MnSb₂Te₄ and provides a promising direction for exploring similar improvements in other thermoelectric materials.

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Publication Details

Journal
Advanced Energy Materials
Published
2025-04-07
DOI
https://doi.org/10.1002/aenm.202500838
Citations
10
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
5.18

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article

Advancing Carriers Mobility in MnSb2Te4 Thermoelectrics via Tailored Textures and Vacancy Modification

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10 citations
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Advanced Thermoelectric Materials and Devices
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article

Advancing Carriers Mobility in MnSb2Te4 Thermoelectrics via Tailored Textures and Vacancy Modification

Zhen‐Hua Ge, Xiao Xu, Maik Butterling, Ran He, A. Wagner, Eric Hirschmann, Juan Cui, Maciej Oskar Liedke, Yiyuan Luo, Jiaqing He, Jinghan Wang, Dasha Mao, Kornelius Nielsch
article en
10 citations

Abstract

Abstract Enhancing carrier mobility plays a crucial role in significantly improving thermoelectric performance. However, due to the lack of a systematic strategy, achieving high mobility remains an elusive goal for most compounds. In this study, the hot‐forging method is applied to polycrystalline MnSb₂Te₄, achieving a remarkable 300% improvement in carrier mobility. Through electron backscattering diffraction microstructural analysis, it is demonstrated how optimizing textures can accelerate carrier movement in MnSb₂Te₄ bulk materials. Moreover, theoretical calculations, combined with experimental positron annihilation spectroscopy, reveal that Te vacancies help counteract intrinsic cation defects, leading to a simultaneous increase in carrier mobility. As a result, the hot‐forged MnSb₂Te₄ specimen, with a diameter of 15 mm, reaches a record‐high maximum figure of merit ( ZT ) value of 1.3 at 773 K and an impressive average ZT of 0.7 between 323 and 773 K. The experimental output efficiency of 4.6%, observed at 773 K on the MnSb₂Te₄‐based single‐leg module, further confirms that the improved transport properties are due to the enhanced carrier mobility. This comprehensive study offers valuable insights into mobility enhancement in MnSb₂Te₄ and provides a promising direction for exploring similar improvements in other thermoelectric materials.

Advanced Energy MaterialsVol. 15(27)
Kunming University of Science and Technology (CN), Helmholtz-Zentrum Dresden-Rossendorf (DE), Leibniz Institute for Solid State and Materials Research (DE), Southern University of Science and Technology (CN), Institute of Applied Physics and Computational Mathematics (CN)
Alexander von Humboldt-Stiftung, National Natural Science Foundation of China, Southern University of Science and Technology, Helmholtz-Zentrum Dresden-Rossendorf
Openalex Percentile: Top 4%
Advanced Thermoelectric Materials and Devices
5.18
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