Unraveling Microscopic Origin of Nb 4d Transition-Metal-Induced Magnetic Anisotropy Evolution in W/CoFeB Heterostructures

The tuning of magnetic anisotropy in magnetic thin films is the key aspect in the condensed matter physics research field to develop materials useful for practical applications. In the present work, we have investigated the microscopic origin of magnetic anisotropy evolution in W-buffered (CoFeB)100–xNbx (x = 0, 3, 5, 10) alloy films induced by a 4d transition metal (Nb). All films were prepared at an elevated growth temperature of 500 °C using the magnetron sputtering technique. Nb-free films (x = 0) exhibit a polycrystalline structure, magnetically isotropic nature, and soft magnetism (coercive field ∼30 Oe). Systematic addition of Nb (from x = 0 to 10) leads to microstructural transformation from polycrystalline to nearly amorphous structure, with a reduction in grain size (from ∼9 to ∼3 nm), surface smoothening, enhanced soft magnetism (coercive field decreases from ∼30 to ∼6 Oe), and more importantly, the emergence of magnetic anisotropy in CoFeB films. In the anisotropic state, angular variation of coercivity reveals that the magnetization reversal process is consistent with a two-phase model. Remarkably, the orbital and spin magnetic moments of Fe and Co atoms were quantified using an element-specific technique of X-ray magnetic circular dichroism. The correlation between the orbital-to-spin moment ratio and observed magnetic anisotropy provides insight into the role of Nb 4d transition metal in inducing the magnetic anisotropy in amorphous/polycrystalline CoFeB thin films, which is vital for advancing their application in spintronics devices.

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Journal
ACS Applied Electronic Materials
Published
2025-04-07
DOI
https://doi.org/10.1021/acsaelm.5c00494
Citations
1
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
1.25

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article

Unraveling Microscopic Origin of Nb 4d Transition-Metal-Induced Magnetic Anisotropy Evolution in W/CoFeB Heterostructures

Deepak Garg, Dileep Kumar, S. D. Singh, Varimalla Raghavendra Reddy et al.
1 citations
ACS Applied Electronic Materials
Magnetic properties of thin films
1.25
article

Unraveling Microscopic Origin of Nb 4d Transition-Metal-Induced Magnetic Anisotropy Evolution in W/CoFeB Heterostructures

Deepak Garg, Dileep Kumar, S. D. Singh, Varimalla Raghavendra Reddy, Neha Gupta, S. K., Sudip Nath, P. D. Gupta, Gnana Spoorthy Komma, Nageshwara Rao Pothana
article en
1 citations

Abstract

The tuning of magnetic anisotropy in magnetic thin films is the key aspect in the condensed matter physics research field to develop materials useful for practical applications. In the present work, we have investigated the microscopic origin of magnetic anisotropy evolution in W-buffered (CoFeB)100–xNbx (x = 0, 3, 5, 10) alloy films induced by a 4d transition metal (Nb). All films were prepared at an elevated growth temperature of 500 °C using the magnetron sputtering technique. Nb-free films (x = 0) exhibit a polycrystalline structure, magnetically isotropic nature, and soft magnetism (coercive field ∼30 Oe). Systematic addition of Nb (from x = 0 to 10) leads to microstructural transformation from polycrystalline to nearly amorphous structure, with a reduction in grain size (from ∼9 to ∼3 nm), surface smoothening, enhanced soft magnetism (coercive field decreases from ∼30 to ∼6 Oe), and more importantly, the emergence of magnetic anisotropy in CoFeB films. In the anisotropic state, angular variation of coercivity reveals that the magnetization reversal process is consistent with a two-phase model. Remarkably, the orbital and spin magnetic moments of Fe and Co atoms were quantified using an element-specific technique of X-ray magnetic circular dichroism. The correlation between the orbital-to-spin moment ratio and observed magnetic anisotropy provides insight into the role of Nb 4d transition metal in inducing the magnetic anisotropy in amorphous/polycrystalline CoFeB thin films, which is vital for advancing their application in spintronics devices.

ACS Applied Electronic MaterialsVol. 7(8)
Raja Ramanna Centre for Advanced Technology (IN), Forschungszentrum Jülich (DE), Homi Bhabha National Institute (IN), Heinz Maier-Leibnitz Zentrum (DE), Stanford Synchrotron Radiation Lightsource (US), UGC DAE Consortium for Scientific Research (IN), Cryogenic Industries (United States) (US)
Homi Bhabha National Institute
Openalex Percentile: Top 22%
Magnetic properties of thin films
1.25
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