Size-Dependent Quantum Confined Stark Effect in Quantum Dot Light-Emitting Diodes: An Electrically Excited Transient Absorption Study

The electric field-induced quantum confined Stark effect is an important factor that can affect the performance of quantum dot light-emitting diodes. However, probing this Stark effect in the operating quantum dot light-emitting diodes is still experimentally challenging using available characterization techniques. Herein we combine our self-developed electrically excited transient absorption spectroscopy with theoretical simulation to unveil the complex size dependence of the Stark effect in quantum dot light-emitting diodes. We found that the Stark effect-induced exciton quenching depends on both wave function confinement and the screening effect. Under reversed biases, the Stark-voltage relationship reveals that smaller quantum dots are less electric field-sensitive because of stronger wave function confinement; while under forward biases, larger quantum dots exhibit stronger electric-field screening and smaller equivalent bias because of more efficient carrier injection─with these intertwined factors, we observed the strongest electric field-induced exciton quenching in medium-size quantum dots.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2025-04-07
DOI
https://doi.org/10.1021/acs.jpclett.5c00401
Citations
5
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
2.59

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article

Size-Dependent Quantum Confined Stark Effect in Quantum Dot Light-Emitting Diodes: An Electrically Excited Transient Absorption Study

X. L. Wang, Jiahui Sun, Fengjia Fan, Lei Wang et al.
5 citations
The Journal of Physical Chemistry Letters
Quantum Dots Synthesis And Properties
2.59
article

Size-Dependent Quantum Confined Stark Effect in Quantum Dot Light-Emitting Diodes: An Electrically Excited Transient Absorption Study

X. L. Wang, Jiahui Sun, Fengjia Fan, Lei Wang, Huaibin Shen, Bo Li, Rui Guo, Zhijie Yan
article en
5 citations

Abstract

The electric field-induced quantum confined Stark effect is an important factor that can affect the performance of quantum dot light-emitting diodes. However, probing this Stark effect in the operating quantum dot light-emitting diodes is still experimentally challenging using available characterization techniques. Herein we combine our self-developed electrically excited transient absorption spectroscopy with theoretical simulation to unveil the complex size dependence of the Stark effect in quantum dot light-emitting diodes. We found that the Stark effect-induced exciton quenching depends on both wave function confinement and the screening effect. Under reversed biases, the Stark-voltage relationship reveals that smaller quantum dots are less electric field-sensitive because of stronger wave function confinement; while under forward biases, larger quantum dots exhibit stronger electric-field screening and smaller equivalent bias because of more efficient carrier injection─with these intertwined factors, we observed the strongest electric field-induced exciton quenching in medium-size quantum dots.

The Journal of Physical Chemistry LettersVol. 16(15)
University of Science and Technology of China (CN), Henan University (CN), Physical Sciences (United States) (US)
National Natural Science Foundation of China, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 11%
Quantum Dots Synthesis And Properties
2.59
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